Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Recombination processes in Te-doped ZnO microstructures

Loading...
Thumbnail Image

Full text at PDC

Publication date

2014

Advisors (or tutors)

Editors

Journal Title

Journal ISSN

Volume Title

Publisher

Wiley-V C H Verlag Gmbh
Citations
Google Scholar

Citation

Abstract

Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influences the intensity of the ZnO deep-level (DL) emission band. The main defects are vacancy complexes which are partially passivated by the isoelectronic Te doping. The weight on the total luminescence of the radiative processes related to defects has been estimated. A straightforward method based on the measurement of the band-to-band luminescence intensity under constant excitation and experimental conditions has been used. The recombination lifetimes for transition through defect levels were also estimated. [GRAPHICS] SEM image and cathodoluminescence emission of needle- and pencil-like TeO2-doped ZnO microstructures.

Research Projects

Organizational Units

Journal Issue

Description

(C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This research was partially supported by MCINN (Projects MAT2009-07882, MAT2012-31959 and CSD2009-00013).

Unesco subjects

Keywords

Collections