Defect assessment of Mg-doped GaN by beam injection techniques

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dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorPiqueras de Noriega, Javier
dc.contributor.authorCastaldini, A.
dc.contributor.authorCavallini, A.
dc.contributor.authorPolent, L.
dc.date.accessioned2023-06-20T10:45:14Z
dc.date.available2023-06-20T10:45:14Z
dc.date.issued2003-12-15
dc.description© 2003 American Institute of Physics. The authors wish to thank D. C. Look, H. Morkoc¸, and J. van Nostrand for providing the investigated material. This work has been partially supported by MCYT through Project No. MAT2000-2119.
dc.description.abstractThe electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous recombination activity in the investigated material. Deep levels giving rise to level-to-band transitions were detected by PC spectroscopy. A large PC quenching observed upon illumination with light of (2.65-2.85) eV is tentatively attributed to metastable traps within the band gap. CL spectra reveal the existence of emission bands centered at 85 K at 3.29, 3.20, 3.15, and 3.01 eV, respectively. Both time-resolved and steady-state CL measurements carried out under different excitation conditions indicate that the 3.15 and 3.01 eV emissions are likely related to donor-acceptor pair transitions. TRCL measurements also reveal different recombination kinetics for these bands and suggest that deep donors are involved in the mechanism responsible for the 3.01 eV emission.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMCYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26240
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dc.identifier.doi10.1063/1.1628832
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.1628832
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51150
dc.issue.number12
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final7475
dc.page.initial7470
dc.publisherAmerican Institute of Physics
dc.relation.projectIDMAT2000-2119
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordChemical-Vapor-Deposition
dc.subject.keywordP-Type Gan
dc.subject.keywordPhotoluminescence Bands
dc.subject.keywordYellow Luminescence
dc.subject.keywordCathodoluminescence
dc.subject.keywordFilms
dc.subject.keywordPhotoconductivity
dc.subject.keywordSpectroscopy
dc.subject.keywordIrradiation
dc.subject.keywordVacancies
dc.subject.ucmFísica de materiales
dc.titleDefect assessment of Mg-doped GaN by beam injection techniques
dc.typejournal article
dc.volume.number94
dspace.entity.typePublication
relation.isAuthorOfPublicationb1b44979-3a0d-45d7-aa26-a64b0dbfee18
relation.isAuthorOfPublication.latestForDiscoveryb1b44979-3a0d-45d7-aa26-a64b0dbfee18
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