Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires
| dc.contributor.author | Nogales Díaz, Emilio | |
| dc.contributor.author | Sánchez, B. | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T03:37:54Z | |
| dc.date.available | 2023-06-20T03:37:54Z | |
| dc.date.issued | 2009-04 | |
| dc.description | © 2008 Elsevier Ltd.. This work was supported by MEC (Project MAT 2006-01259) International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008-2009. Toledo). | |
| dc.description.abstract | Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | MEC | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24273 | |
| dc.identifier.doi | 10.1016/j.spmi.2008.11.027 | |
| dc.identifier.issn | 0749-6036 | |
| dc.identifier.officialurl | http://www.sciencedirect.com/science/journal/07496036/45/4-5 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/44098 | |
| dc.issue.number | 4 May. | |
| dc.journal.title | Superlattices and Microstructures | |
| dc.language.iso | eng | |
| dc.page.final | 160 | |
| dc.page.initial | 156 | |
| dc.publisher | Academic Press Ltd- Elsevier Science Ltd | |
| dc.relation.projectID | MAT 2006-01259 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Luminescence | |
| dc.subject.keyword | Beta-Ga_2O_3 | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires | |
| dc.type | journal article | |
| dc.volume.number | 45 | |
| dcterms.references | [1] E. Nogales, B. Méndez, J. Piqueras, Appl. Phys. Lett. 86 (2005) 113112. [2] E. Nogales, J.A. García, B. Méndez, J. Piqueras, J. Appl. Phys. 101 (2007) 033517. [3] E. Nogales, J.A. García, B. Méndez, J. Piqueras, Appl. Phys. Lett. 91 (2007) 133108. [4] T. Harwig, F. Kellendonk, J. Solid State Chem. 24 (1978) 255. [5] E.G. Villora, T. Atou, T. Sekiguchi, T. Sugawara, M. Kikuchi, T. Fukuda, Solid State Commun. 120 (2001) 455. [6] J.C. Lu, P. Chang, Z. Fan, Mater. Sci. Eng. Rep. 52 (2006) 49. [7] Z.R. Dai, Z.W. Pan, Z.L. Wang, Adv. Funct. Mater. 13 (2003) 9. [8] L. Binet, D. Gourier, J. Phys. Chem. Solids 59 (1998) 1241. [9] G. Blasse, A. Bril, J. Phys. Chem. Solids 31 (1970) 707. [10] K. Shimamura, E.G. Villora, T. Ujiie, K. Aoki, Appl. Phys. Lett. 92 (2008) 201914. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | f65096c2-6796-43bf-a661-9e2079b73d1c | |
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| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | f65096c2-6796-43bf-a661-9e2079b73d1c |
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