Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires

Abstract

Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed.