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Long time asymptotics for the semiconductor Vlasov-Poisson-Boltzmann equations

dc.contributor.authorCarpio Rodríguez, Ana María
dc.contributor.authorCebrián, Elena
dc.contributor.authorMustieles, F. J.
dc.date.accessioned2024-01-22T15:35:01Z
dc.date.available2024-01-22T15:35:01Z
dc.date.issued2001
dc.description.abstractIn this paper we analyze the long time behavior of solutions to the one-dimensional Vlasov–Poisson–Boltzmann (VPB) equations for semiconductors in unbounded domains when only one type of carriers (electrons) are considered. We prove that the distribution of electrons tends for large times to a steady state of the VPB equations with vanishing collision term and the same total charge as the initial data. In the proof of the main result, the conservation law of charge, the balance of energy and entropy inequalities are rigorously derived. An important argument in the proof is to use a Lyapunov-type functional related to these physical quantities.
dc.description.departmentDepto. de Análisis Matemático y Matemática Aplicada
dc.description.facultyFac. de Ciencias Matemáticas
dc.description.refereedTRUE
dc.description.statuspub
dc.identifier.citationCarpio, A., et al. «LONG TIME ASYMPTOTICS FOR THE SEMICONDUCTOR VLASOV–POISSON–BOLTZMANN EQUATIONS». Mathematical Models and Methods in Applied Sciences, vol. 11, n.o 09, diciembre de 2001, pp. 1631-55. https://doi.org/10.1142/S0218202501001513.
dc.identifier.issn0218-2025
dc.identifier.officialurlhttps://doi.org/10.1142/S0218202501001513
dc.identifier.urihttps://hdl.handle.net/20.500.14352/94460
dc.issue.number9
dc.journal.titleMathematical Models and Methods in Applied Sciences
dc.language.isoeng
dc.page.final1665
dc.page.initial1631
dc.publisherWorld Scientific Publishing
dc.rights.accessRightsrestricted access
dc.subject.keywordUnbounded domains
dc.subject.keywordEntropy inequalities
dc.subject.keywordLyapunov-type functional
dc.subject.ucmEcuaciones diferenciales
dc.subject.unesco1202.20 Ecuaciones Diferenciales en derivadas Parciales
dc.titleLong time asymptotics for the semiconductor Vlasov-Poisson-Boltzmann equationsen
dc.typejournal article
dc.type.hasVersionVoR
dc.volume.number11
dspace.entity.typePublication
relation.isAuthorOfPublicationf301b87d-970b-4da8-9373-fef22632392a
relation.isAuthorOfPublication.latestForDiscoveryf301b87d-970b-4da8-9373-fef22632392a

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