Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Long time asymptotics for the semiconductor Vlasov-Poisson-Boltzmann equations

Loading...
Thumbnail Image

Full text at PDC

Publication date

2001

Advisors (or tutors)

Editors

Journal Title

Journal ISSN

Volume Title

Publisher

World Scientific Publishing
Citations
Google Scholar

Citation

Carpio, A., et al. «LONG TIME ASYMPTOTICS FOR THE SEMICONDUCTOR VLASOV–POISSON–BOLTZMANN EQUATIONS». Mathematical Models and Methods in Applied Sciences, vol. 11, n.o 09, diciembre de 2001, pp. 1631-55. https://doi.org/10.1142/S0218202501001513.

Abstract

In this paper we analyze the long time behavior of solutions to the one-dimensional Vlasov–Poisson–Boltzmann (VPB) equations for semiconductors in unbounded domains when only one type of carriers (electrons) are considered. We prove that the distribution of electrons tends for large times to a steady state of the VPB equations with vanishing collision term and the same total charge as the initial data. In the proof of the main result, the conservation law of charge, the balance of energy and entropy inequalities are rigorously derived. An important argument in the proof is to use a Lyapunov-type functional related to these physical quantities.

Research Projects

Organizational Units

Journal Issue

Description

Keywords

Collections