Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Laser induced single events in SRAMs

dc.book.titleProceedings of the 2013 Spanish Conference on Electron Devices (CDE 2013)
dc.conference.date12/02/2013-14/02/2013
dc.conference.placeValladolid (Spain)
dc.conference.titleElectron Devices (CDE), 2013 Spanish Conference on
dc.contributor.authorPalomar Trives, Carlos
dc.contributor.authorLópez Calle, Isabel
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorGonzález Izquierdo, Jesús
dc.date.accessioned2023-06-19T15:54:29Z
dc.date.available2023-06-19T15:54:29Z
dc.date.issued2013-02
dc.description©IEEE. E-ISBN : 978-1-4673-4667-2. Spanish Conference on Electron Devices (CDE)(9. 2013. Valladolid, España)
dc.description.abstractThis paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/29179
dc.identifier.doi10.1109/CDE.2013.6481390
dc.identifier.isbn978-1-4673-4666-5
dc.identifier.officialurlhttp://dx.doi.org/10.1109/CDE.2013.6481390
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/35721
dc.language.isoeng
dc.page.final256
dc.page.initial253
dc.page.total4
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.ispartofseriesSpanish Conference on Electron Devices
dc.relation.projectIDAYA2009-13300-C03
dc.relation.projectIDConsolider SAUUL CSD2007-00013
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordSRAM chips
dc.subject.keywordLaser beam effects
dc.subject.keywordRadiation hardening (electronics)
dc.subject.keywordSRAM
dc.subject.keyworderror emulation
dc.subject.keywordLaser induced single events
dc.subject.keywordPulsed laser
dc.subject.keywordSemiconductor memory
dc.subject.keywordSensitivity map
dc.subject.keywordSpace radiation
dc.subject.keywordMicroprocessors
dc.subject.keywordPerformance evaluation
dc.subject.keywordPolymers
dc.subject.keywordRadiation effects
dc.subject.keywordSemiconductor lasers
dc.subject.keywordSensitivity
dc.subject.keywordLaser
dc.subject.keywordMCU
dc.subject.keywordSEU
dc.subject.keywordErrors
dc.subject.keywordMemory
dc.subject.ucmElectrónica (Física)
dc.subject.ucmÓptica (Física)
dc.subject.ucmCircuitos integrados
dc.subject.unesco2209.19 Óptica Física
dc.subject.unesco2203.07 Circuitos Integrados
dc.titleLaser induced single events in SRAMs
dc.typebook part
dcterms.references[1] I. Lopez-Calle, F. J. Franco, J. G. Izquierdo, & J. A. Agapito, "LASER System for Space Environment Emulation", IEEE Spanish Conference on Electron Devices, Palma de Mallorca (Spain), pp. 1-4, Feb 2011. [2] F. J. Franco, I. Lopez-Calle, J. G. Izquierdo, and J. A. Agapito, "Modification of the LM124 single event transients by load resistors," IEEE Transactions on Nuclear Science, vol. 57, no. 1, pp. 358-365, Feb. 2010. [3] F. Miller, "Interest of laser test facility for the assessment of natural radiation environment effects on integrated circuits based systems", 7th RADECS, pp. 199-209, 2003.
dspace.entity.typePublication
relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

Download

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
eprintsucm29179.pdf
Size:
1.02 MB
Format:
Adobe Portable Document Format