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Laser induced single events in SRAMs

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http://dx.doi.org/10.1109/CDE.2013.6481390

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Publication date

2013

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IEEE-Inst Electrical Electronics Engineers Inc
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https://hdl.handle.net/20.500.14352/35721

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Abstract

This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.

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©IEEE. E-ISBN : 978-1-4673-4667-2. Spanish Conference on Electron Devices (CDE)(9. 2013. Valladolid, España)

UCM subjects

Electrónica (Física), Óptica (Física), Circuitos integrados

Unesco subjects

2209.19 Óptica Física, 2203.07 Circuitos Integrados

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