Laser induced single events in SRAMs
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2013
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IEEE-Inst Electrical Electronics Engineers Inc
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Abstract
This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
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©IEEE.
E-ISBN : 978-1-4673-4667-2.
Spanish Conference on Electron Devices (CDE)(9. 2013. Valladolid, España)