Electron Doping by Charge Transfer at LaFeO_3 /Sm_2CuO_4 Epitaxial Interfaces

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https://www.doi.org/10.1002/adma.201203483

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2013

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Wiley
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https://hdl.handle.net/20.500.14352/91638

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Bruno, F.Y., Schmidt, R., Varela, M., Garcia‐Barriocanal, J., Rivera‐Calzada, A., Cuellar, F.A., Leon, C., Thakur, P., Cezar, J.C., Brookes, N.B., Garcia‐Hernandez, M., Dagotto, E., Pennycook, S.J., Santamaria, J.: Electron Doping by Charge Transfer at LaFeO 3 /Sm 2 CuO 4 Epitaxial Interfaces. Advanced Materials. 25, 1468-1473 (2013). https://doi.org/10.1002/adma.201203483

Abstract

Using X-ray absorption spectroscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for charge transfer at the interface between the Mott insulators Sm2CuO4 and LaFeO3 is obtained. As a consequence of the charge transfer, the Sm2CuO4 is doped with electrons and thus epitaxial Sm2CuO4/LaFeO3 heterostructures become metallic.

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Física del estado sólido

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2211 Física del Estado Sólido

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