Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

Simple item page
dc.book.title2005 Spanish Conference on Electron Devices, Proceedings
dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorSan Andrés Serrano, Enrique
dc.date.accessioned2023-06-20T13:41:01Z
dc.date.available2023-06-20T13:41:01Z
dc.date.issued2005
dc.descriptionSpanish Conference on Electron Devices (5. 2005. Tarragona, España). © 2005 IEEE.
dc.description.abstractA comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 degrees C thermal annealing in oxygen atmosphere exhibit the best characteristics, with D-it, density being the lowest value measured in this work (5 - 6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26036
dc.identifier.citation[1] W. D. Brown and W. W. Grannemann, “C-V characteristics of metal-titanium dioxide-silicon capacitors”, Solid State Eleclron., vol. 21, p. 837, 1978. [2] T. Fuyuki and H. Matsunami, “Electronic properties of the interface between Si and TiOl deposited at very low temperatures”, Jpn. J. Apl. Phys., vol. 25, p. 1288, 1986. [3] N. Rausch and E. P. Burte, “Thin Ti02 films prepared by low pressure chemical vapor deposition”, J. Elecrrochem. Soc., vol. 140, p. 145, 1993. [4] J. Yan, D. C. Gilmer, S. A. Campbell, W. L. Gladfelter, and P. G. Schmid, “Structural and electrical characterization of TiO2 grown from titanium tetrakis Isopropoxide (TTIP) and TTIP/HzO ambients”, J. Vac. Sci. Technol. B, vol. 14, p. 1706, 1996. [5]S. A. Campbell, H.-S. Kim, D. C. Gilmer, E. He, T. Ma, and W. L. Gladfelter, "Titanium dioxide (TiOl)-based gate insulators”, IBMJ. Res.Develop., vol. 43, no. 3, pp. 383-392, May 1999. [6] C.D. Wilk, R.M. Wallace, and I.M. Anthony, “High-k gate dielectrics: current status and materials properties consideration”,J. Appl. Phys. vol. 89, no. 10, pp. 5243-5275, May 2001. [7] S. Monticone, R. Tufeu, A. V. Kanaev, E. Scolan, and C. Sánchez, “Quantum size effect in TiO2 nanoparticles: does it exist?”, Appl. Surf. Sci., vol. 162-163, pp. 565-570, 2000. [8] J. Pascual, J. Camassel, and H. Mathieu, “Resolved quadrupolar transition in TiO2’, Phys. Rev. Lett., vol. 39, no. 23, pp, 1490-1493, December 1977. [9] M. D. Stamate, “On the non-linear I-V characteristics of dc magnetron sputtered Ti02 thin films”, Appl. Surf. Sci., vol. 205, 99.353-357, 2003. [1O] M. Ritala, and M. Leskela, “Handbook of thin film materials, Vol. 1, Deposition and processing of thin film materials”, Academic, San Diego, p. 104,2002. [11] J. Aarik, A. Aidla, H. Mändar, and T. Uustare, “Atomic layer deposition of titanium dioxide from TiCl4 and H20: investigation of growth mechanism”, Appl. Surf. Sci., vol. 172, pp. 148-158, 2001. [12] J. Aarik, A. Aidla, V. Sammelselg, T. Uustare, M. Ritala, and M. Leskela, “Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water”, Thin Solid Films, vol. 370, pp. 163-172, 2000. [13] V. Sammelselg, E. Rauhala, K. Arstila, A. Zakharov. J. Aarik, A. Kikas, J. Karlis, A. Tarre, A. Scppala, J. Asari, and I. Martinson, "Study of thin oxide films by electron, ion and synchrotron radiation beams”, Mikrochimico ACIU, vol. 139, pp. 165-169, 2002. [14] L. He, W. Hasegawa, T. Sawada, and H. Ohno, “A self consistent computer simulation of compound semiconductor MIS C-V curves based on the disorder-induced gap-state model”, J. Appl. Phys. vol. 63, no. 6, pp. 2120-2130, March 1988. [15] S. Dueñas, R. Peláez, H. Castán, R. Pinacho, L. Quintanilla, J. Barbolla, I. Mártil, and G. González-Díaz, “Experimental observation of conductance transients in AVSiN,:H/Si metal-insulator-semiconductor structures”, Appl. Phys. Lett. vol. 71, no. 6, pp. 826-828, August 1997. [16] H. Castán, S. Dueñas, J. Barbolla, E. Redondo, N. Blanco, I. Mártil, and G. González-Díaz, “Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride AUSiN,:WInGaAs structures by DLTS and conductance transient techniques”, Microelectron. Rel. vol. 40, pp. 845-848, (2000).
dc.identifier.doi10.1109/SCED.2005.1504303
dc.identifier.isbn0-7803-8810-0
dc.identifier.officialurlhttp://dx.doi.org/10.1109/SCED.2005.1504303
dc.identifier.relatedurlhttp://ieeexplore.ieee.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53369
dc.language.isoeng
dc.page.final52
dc.page.initial49
dc.page.total4
dc.publisherIEEE
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordV Characteristics
dc.subject.keywordTiO2
dc.subject.keywordDioxide
dc.subject.keywordGrowth.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleInterface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
dc.typebook part
dspace.entity.typePublication
relation.isAuthorOfPublication6db57595-2258-46f1-9cff-ed8287511c84
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication21e27519-52b3-488f-9a2a-b4851af89a71
relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203
Download
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Martil,40.pdf
Size:
628.79 KB
Format:
Adobe Portable Document Format
downoload Download
Collections
Secciones de libros