Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

Abstract

A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap state densities. From our results, HPRS films submitted to in situ 900 degrees C thermal annealing in oxygen atmosphere exhibit the best characteristics, with D-it, density being the lowest value measured in this work (5 - 6 x 10(11) cm(-2) eV(-1)), and undetectable conductance transients within our experimental limits.