Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Prado Millán, Álvaro Del | |
| dc.contributor.author | San Andrés Serrano, Enrique | |
| dc.date.accessioned | 2023-06-20T10:44:04Z | |
| dc.date.available | 2023-06-20T10:44:04Z | |
| dc.date.issued | 2007-11-05 | |
| dc.description | © 2007 American Institute of Physics. This work was partially supported by the Spanish M.E.C. under TEC2004 1237/MIC and TEC2007/63318 contracts. | |
| dc.description.abstract | High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2 film in O-2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O-2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Spanish M.E.C. | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25981 | |
| dc.identifier.doi | 10.1063/1.2811958 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.2811958 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/51104 | |
| dc.issue.number | 19 | |
| dc.journal.title | Applied physics Letters | |
| dc.language.iso | eng | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | TEC2004-1237/MI | |
| dc.relation.projectID | TEC2007/63318 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Thin-Films. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2 | |
| dc.type | journal article | |
| dc.volume.number | 91 | |
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| dspace.entity.type | Publication | |
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| relation.isAuthorOfPublication.latestForDiscovery | a5ab602d-705f-4080-b4eb-53772168a203 |
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