Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
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2007
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Amer Inst Physics
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1) M. Cho, J. Park, H. B. Park, C. S. Hwang, J. Jeong, K. S. Hyun, Y. Kim, C. Oh, and H. Kang, Appl. Phys. Lett. 81, 3630 (2002).
2) P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, and J. G. Ekerdt, J. Appl. Phys. 91, 4353 (2002).
3) M. Toledano-Luque, E. San Andrés, J. Olea, A. del Prado, I. Mártil, W. Bohne, J. Röhrich, and E. Strub, Mater. Sci. Semicond. Process. 9, 1020 (2006).
4) M. L. Lucía, J. L. Hernández-Rojas, J. Santamaría, I. Mártil, G. González-Díaz, and F. Sánchez-Quesada, Appl. Phys. Lett. 61, 231 (1992).
5) E. San Andrés, M. Toledano-Luque, A. del Prado, M. A. Navacerrada, I. Mártil, G. González-Díaz, W. Bohne, J. Röhrich, and E. Strub, J. Vac. Sci. Technol. A 23, 1523 (2005).
6) A. del Prado, E. San Andrés, I. Mártil, G. González-Díaz, D. Bravo, F. J. López, W. Bohne, J. Röhrich, B. Selle, and F. L. Martínez, J. Appl. Phys. 93, 8930 (2003).
7) D. A. Neumayer and E. Cartier, J. Appl. Phys. 90, 1801 (2001).
8) D. V. Tsu, J. Vac. Sci. Technol. B 18, 1796 (2000).
9) G. Norlén, Phys. Scr. 8, 249 (1973).
10) W. F. Meggers, C. H. Corliss, and B. F. Scribner, Natl. Bur. Stand. Circ. (U.S.) 145, 387 (1975).
11) R. W. B. Pearse and A. G. Gaydon, The Identification of Molecular Spectra (Wiley, New York, 1976).
12) V. Hodoroaba, E. Steers, V. Hoffmann, W. Unger, and K. Wetzig, J. Anal. At. Spectrom. 18, 521 (2003).
13) B. Chapman, Glow Discharge Processes (Wiley, New York, 1980).
Abstract
High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si-O bonds after the sputtering of the HfO2 film in O-2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O-2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering.
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© 2007 American Institute of Physics. This work was partially supported by the Spanish M.E.C. under TEC2004 1237/MIC and TEC2007/63318 contracts.