Cathodoluminescence of In doped ZnS nanostructures grown by vapor-solid method

Abstract

Vapor–solid (VS) growth method at temperatures in the range from 1000 °C to 1200 °C has been used to obtain In doped ZnS micro- and nanostructures. The morphologies of the synthesized structures depend strongly on the deposition temperature, consisting on nano- and microswords, nanoribbons and nanoplates, with a major presence of nanoplates and strongly hierarchical structures at the higher In contents. The degree of impurity incorporation and the influence of the dopant on the luminescence properties have been studied. While in pure ZnS the main deep level bands are peaked in the blue-green region, In doped samples show an orange-red emission.