Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
| dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T19:08:01Z | |
| dc.date.available | 2023-06-20T19:08:01Z | |
| dc.date.issued | 1991-01-01 | |
| dc.description | © 1991 American Institute of Physics. This work was partially supported by the Comisión Interministerial de Ciencia y Tecnología (Project PB86-0151) and by DGICYT-DAAD. | |
| dc.description.abstract | Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Comisión Interministerial de Ciencia y Tecnologia | |
| dc.description.sponsorship | DGICYT-DAAD | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/27038 | |
| dc.identifier.doi | 10.1063/1.347692 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.347692 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59291 | |
| dc.issue.number | 1 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 504 | |
| dc.page.initial | 502 | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | PB86-0151 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Photo-Luminescence | |
| dc.subject.keyword | Dislocations | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence | |
| dc.type | journal article | |
| dc.volume.number | 69 | |
| dcterms.references | 1. F. Domíguez-Adame and J. Piqueras, J. Appl. Phys. 66, 2751 ( 1989). 2. J. Llopis and J. Piqueras, Phys. Status Solidi A 49, K9 ( 1978). 3. F. Domínguez-Adame, J. Piqueras, N. de Diego, and 3. Llopis, J. Appl. Phys. 63, 2583 (1988). 4. F. Domínguez-Adame and J. Piqueras, Mater. Chem Phys. 21, 539 (1989). 5. M. Cocito, P. Franzosi, G. Salviati, and F. Taiariol, Scanning Electron Microsc. IV, 1299 (1986). 6. N. Killoran, B. C. Cavenett, M. Godlewski, T. A. Kennedy, and N. D. Wilsey, J. Phys. C 15, L723 ( 1982). 7. F. Domíguez-Adame, J. Piqueras, and P. Fernández (unpublished). 8. K. BGhm and B. Fischer, J. Appl. Phys. 50, 5453 (1979). 9. M. Cocito, C. Papuzza, and F. Taiariol, Inst. Phys. Conf. Ser. No. 67, 273 (1983). 10. A. K. Chin, S. Mahajan, and A. A. Ballman, Appl. Phys. Lett. 35, 784 (1979). 11. S Myhajlenko, J. L. Batstone, H. J. Hutchinson, and J. W. Steeds, J. Phys. c 17, 6477 ( 1984). I2. H. Temkin and W. A. Bonner, J. Appl. Phys. 52, 397 ( 1981). 13. H. Temkin, B. V. Dutt, W. A. Bonner, and V. G. Keramidas, J. Appl. Phys. 53, 7526 (1982) | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | dbc02e39-958d-4885-acfb-131220e221ba | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | dbc02e39-958d-4885-acfb-131220e221ba |
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