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Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence

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http://dx.doi.org/10.1063/1.347692

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1991

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American Institute of Physics
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https://hdl.handle.net/20.500.14352/59291

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Abstract

Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.

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© 1991 American Institute of Physics. This work was partially supported by the Comisión Interministerial de Ciencia y Tecnología (Project PB86-0151) and by DGICYT-DAAD.

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Física de materiales

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