Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence

Abstract

Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.