Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T18:57:17Z | |
| dc.date.available | 2023-06-20T18:57:17Z | |
| dc.date.issued | 1993-03 | |
| dc.description | © 1993 IOP Publishing Ldt. This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017). | |
| dc.description.abstract | Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGICYT | |
| dc.description.sponsorship | Volkswgen Foundation | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25042 | |
| dc.identifier.doi | 10.1088/0268-1242/8/3/002 | |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.officialurl | http://iopscience.iop.org/0268-1242/8/3/002 | |
| dc.identifier.relatedurl | http://iopscience.iop.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58990 | |
| dc.issue.number | 3 | |
| dc.journal.title | Semiconductor Science and Technology | |
| dc.language.iso | eng | |
| dc.page.final | 321 | |
| dc.page.initial | 320 | |
| dc.publisher | IOP Publishing LTD | |
| dc.relation.projectID | PB 92-1017 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Dislocations | |
| dc.subject.keyword | Behavior | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs | |
| dc.type | journal article | |
| dc.volume.number | 8 | |
| dcterms.references | [I] Jacob G, Wrges J p, Schemali C, Duseaux M, Hallais J, Bartels W J and Roksnoer P J 1982 J. Crystal Growth 57 245 [2] Stirland D J, Hart D G, Grant I, Brael M R and Clark S 1987 Microscopy of Semiconducting Materials 1987 (Inst. Phys. ConJ Ser 87) p 269 [3] Kidd p, Booker G R and Stirland D J 1987 7 Microscopy of Semiconducting Materials 1987 (Inst. Phys. Conf. Ser. 87) p 275 [4] Méndez B and Piqueras J 1992 AppL Phys. Lett. 60 1357 [5] Méndez B and Piqueras J 1989 Microscopy of Semiconducting Materials 1989 (Inst. Phys. Conf Ser 100) p789 [6] Méndez B and Piqueras J 1992 1. AppL Phys. 69 2776 [7] Urchulutegui M, Piqueras J. and Llopis .J. Appl. Phys. 65 2667 [8] Yonenaga I and Sumino K 1987 J. Appl. Phys. 62 1212 [9] Kultscher N and Balk L J 1986 Scannong Electron Microscopy [10] Bresse J F and Papadopoulo A C 1988 J.Appl. Phys. Lett. 51 183 [11] Bresse J F and Papadopoulo A C 1987 AppL Phys. Lett. 51 183. [12] Kirillov D. Victor M andPowell R A 1987 Appl. Phys. Lett. 50 183 | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 |
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