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Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs

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http://iopscience.iop.org/0268-1242/8/3/002

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1993

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IOP Publishing LTD
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https://hdl.handle.net/20.500.14352/58990

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Abstract

Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.

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© 1993 IOP Publishing Ldt. This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017).

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