Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs

Thumbnail Image
Full text at PDC
Publication Date
Advisors (or tutors)
Journal Title
Journal ISSN
Volume Title
IOP Publishing LTD
Google Scholar
Research Projects
Organizational Units
Journal Issue
Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.
© 1993 IOP Publishing Ldt. This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017).
Unesco subjects
[I] Jacob G, Wrges J p, Schemali C, Duseaux M, Hallais J, Bartels W J and Roksnoer P J 1982 J. Crystal Growth 57 245 [2] Stirland D J, Hart D G, Grant I, Brael M R and Clark S 1987 Microscopy of Semiconducting Materials 1987 (Inst. Phys. ConJ Ser 87) p 269 [3] Kidd p, Booker G R and Stirland D J 1987 7 Microscopy of Semiconducting Materials 1987 (Inst. Phys. Conf. Ser. 87) p 275 [4] Méndez B and Piqueras J 1992 AppL Phys. Lett. 60 1357 [5] Méndez B and Piqueras J 1989 Microscopy of Semiconducting Materials 1989 (Inst. Phys. Conf Ser 100) p789 [6] Méndez B and Piqueras J 1992 1. AppL Phys. 69 2776 [7] Urchulutegui M, Piqueras J. and Llopis .J. Appl. Phys. 65 2667 [8] Yonenaga I and Sumino K 1987 J. Appl. Phys. 62 1212 [9] Kultscher N and Balk L J 1986 Scannong Electron Microscopy [10] Bresse J F and Papadopoulo A C 1988 J.Appl. Phys. Lett. 51 183 [11] Bresse J F and Papadopoulo A C 1987 AppL Phys. Lett. 51 183. [12] Kirillov D. Victor M andPowell R A 1987 Appl. Phys. Lett. 50 183