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Impact of High Particle Flux in Radiation Ground Tests with Protons

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dc.contributor.authorRezaei, Mohammadreza
dc.contributor.authorMartín Holgado, Pedro
dc.contributor.authorMorilla García, Yolanda
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorFabero Jiménez, Juan Carlos
dc.contributor.authorMecha López, Hortensia
dc.contributor.authorPuchner, Helmut
dc.contributor.authorHubert, Guillaume
dc.contributor.authorClemente Barreira, Juan Antonio
dc.date.accessioned2023-06-22T12:35:55Z
dc.date.available2023-06-22T12:35:55Z
dc.date.issued2022-08-22
dc.description.abstractThis abstract presents an experimental study of the impact of using a high flux in radiation ground tests on the measured cross-section of SRAMs. Experimental results obtained with 15 MeV protons will show that using a high particle flux makes the measured cross-section increase by almost 1 order of magnitude.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.departmentDepto. de Arquitectura de Computadores y Automática
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyFac. de Informática
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/76464
dc.identifier.doi10.1109/RADECS50773.2020.9857721
dc.identifier.issn1609-0438
dc.identifier.officialurlhttps://ieeexplore.ieee.org/xpl/conhome/9857595/proceeding
dc.identifier.urihttps://hdl.handle.net/20.500.14352/72903
dc.journal.titleProc. of 2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
dc.language.isoeng
dc.page.final4
dc.page.initial1
dc.publisherIEEE eXpress Conference Publishing
dc.relation.projectIDTIN2017-87237
dc.relation.projectIDESP2015-68245-C4-4-P
dc.rights.accessRightsopen access
dc.subject.keywordCOTS
dc.subject.keywordSRAM
dc.subject.keywordproton tests
dc.subject.keywordradiation hardness
dc.subject.keywordreliability
dc.subject.keywordsoft error
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.subject.ucmCircuitos integrados
dc.subject.ucmElectrónica (Informática)
dc.subject.ucmElectrónica (Informática)
dc.subject.unesco2203.07 Circuitos Integrados
dc.subject.unesco2203 Electrónica
dc.subject.unesco2203 Electrónica
dc.titleImpact of High Particle Flux in Radiation Ground Tests with Protons
dc.typejournal article
dcterms.references[1] E. H. Ibe, Terrestrial Radiation Effects in ULSI Devices and Electronic Systems, pp. 33–48. 2015. [2] J. Mekki et al., “CHARM: A Mixed Field Facility at CERN for Radiation Tests in Ground, Atmospheric, Space and Accelerator Representative Environments,” IEEE Trans. Nucl. Sci., vol. 63, pp. 2106–2114, Aug. 2016. [3] N. A. Dodds et al., “The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate,” IEEE Trans. Nucl. Sci., vol. 62, pp. 2440–2451, Dec. 2015. [4] L. D. Edmonds, “A method for correcting cosine-law errors in SEU test data,” IEEE Trans. Nucl. Sci., vol. 49, no. 3, pp. 1522–1538, 2002. [5] A. B. Boruzdina et al., “Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM,” IEEE Trans. Nucl. Sci., vol. 62, pp. 2860–2866, Dec. 2015. [6] S. Kiamehr et al., “Temperature-Aware Dynamic Voltage Scaling to Improve Energy Efficiency of Near-Threshold Computing,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 25, pp. 2017–2026, Jul. 2017. [7] J. A. Clemente et al., “SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons,” IEEE Trans. Nucl. Sci., vol. 65, pp. 1858–1865, Aug. 2018. [8] L. Salvy et al., “Total Ionizing Dose influence on the Single Event Effect sensitivity of active EEE components,” in 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp. 1–8, IEEE, 2016. [9] F. Ravotti, “Dosimetry techniques and radiation test facilities for total ionizing dose testing,” IEEE Trans. Nucl. Sci., vol. 65, pp. 1440–1464, Aug. 2018. [10] F. J. Franco, J. A. Clemente, H. Mecha and R. Velazco, “Influence of Randomness During the Interpretation of Results From Single-Event Experiments on SRAMs,” IEEE Trans. Device Mater. Rel., vol. 19, pp. 104–111, Mar. 2019. [11] H. J. Tausch, “Simplified birthday statistics and hamming edac,” IEEE Trans. Nucl. Sci., vol. 56, pp. 474–478, Apr. 2009. [12] Q. Yu, L. Luo, M. Zhu, Y. Sun, and M. Tang, “Experimental Study of Heavy Ion Flux Impact on Single Event Errors of VLSI for Space,” in 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp. 1–3, Sep. 2013. [13] J. Luo et al., “Influence of heavy ion flux on single event effect testing in memory devices,” Nucl. Instrum. Methods Phys. Res., B, vol. 406, pp. 431–436, 2017. [14] J. Luo et al., “Investigation of flux dependent sensitivity on single event effect in memory devices,” Chinese Physics B, vol. 27, pp. 1–7, Jul. 2018. [15] European Space Components Coordination (ESCC), “SINGLE EVENT EFFECTS TEST METHOD AND GUIDELINES. ESCC Basic Specification No. 25100,” 2014. [16] “Centro Nacional de Aceleradores, Seville, Spain.” http://www.cna.us.es. [17] J. F. Ziegler, M. D. Ziegler and J. P. Biersack, “SRIM–The stopping and range of ions in matter (2010),” Nucl. Instrum. Methods Phys. Res., B, vol. 268, no. 11-12, pp. 1818–1823, 2010. [18] F. J. Franco et al., “Inherent uncertainty in the determination of multiple event cross sections in radiation tests,” IEEE Trans. Nucl. Sci., pp. 1–1, 2020.
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