Carrier recombination at screw dislocations in n-type AlGaN layers
| dc.contributor.author | Albrecht, M. | |
| dc.contributor.author | Cremades Rodríguez, Ana Isabel | |
| dc.contributor.author | Krinke, J. | |
| dc.contributor.author | Christiansen, S. | |
| dc.contributor.author | Ambacher, O. | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Strunk, H. P. | |
| dc.contributor.author | Stutzmann, M. | |
| dc.date.accessioned | 2023-06-20T18:52:27Z | |
| dc.date.available | 2023-06-20T18:52:27Z | |
| dc.date.issued | 1999-11 | |
| dc.description | © 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany. International Conference on Nitride Semiconductors (3. 1999. Montpellier, Francia). | |
| dc.description.abstract | We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/23447 | |
| dc.identifier.doi | 10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.3.CO;2-B | |
| dc.identifier.issn | 0370-1972 | |
| dc.identifier.officialurl | http://onlinelibrary.wiley.com/doi/10.1002/(SICI)1521-3951(199911)216:1%3C409::AID-PSSB409%3E3.0.CO;2-K/abstract | |
| dc.identifier.relatedurl | http://onlinelibrary.wiley.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58826 | |
| dc.issue.number | 1 | |
| dc.journal.title | Phisica Status Solidibi B-Basic Research | |
| dc.language.iso | eng | |
| dc.page.final | 414 | |
| dc.page.initial | 409 | |
| dc.publisher | Wiley-V C H Verlag Gmbh | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Chemical-Vapor-Deposition | |
| dc.subject.keyword | Threading-Edge | |
| dc.subject.keyword | Gan Films | |
| dc.subject.keyword | Scattering | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Carrier recombination at screw dislocations in n-type AlGaN layers | |
| dc.type | journal article | |
| dc.volume.number | 216 | |
| dcterms.references | [1] J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, Th. Fraunheim, M. Heggie, S. Úberg, and P. R. Briddon, Phys. Rev. Lett. 79, 3672 (1997). [2] J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, Th. Fraunheim, S. Úberg, and P. R. Briddon, Phys. Rev. B 58, 12571 (1998). [3] A. F. Wright and U. Grossner, Appl. Phys. Lett. 73, 2751 (1998). [4] H. M. Ng, D. Doppalapudi, T. D. Moustakas, N. G. Weimann, and L. F. Eastmann, Appl. Phys. Lett. 73, 821 (1998) [5] N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998). [6] P.J. Hansen, Y. E. Strausser, A. N. Erickson, E.J. Tarsa, P. Kozodoy, E. G.Brazel,J. P.Ibbetson, U. Mishra, V. Narayamurti, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 72, 2247 (1998). [7] E. G. Brazel, M. A. Chin, and V. Narayanamurti, Appl. Phys. Lett. 74, 2367 (1999). [8] D. C. Look and J. R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999). [9] S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolani, and H. Erikson, Appl. Phys. Lett. 70, 420 (1997). [10] V. L. Bronch-Bruevich and V. B. Glasko, Fiz. Tverd. Tela 3, 36 (1961). [11] B. PoÈdoÈr, phys. stat. sol. 16, K167 (1966). [12] Z. Lilienthal-Weber, Y. Chen, S. Ruvimov, and J. Washburn, Phys. Rev. Lett. 79, 2835 (1997). [13] M. Albrecht, S.Christiansen, H. P. Strunk,C. Kirchner, M. Mayer, M. Kamp, and K. J. Ebeling, unpublished. [14] M. Kittler and W. Seifert, phys. stat. sol. (a) 138, 687 (1993). [15] Yu. G. Shreter and Yu. T. Rebane, Proc. 23rd Internat. Conf. Physics of Semiconductors, Vol. 4, Eds. M. Scheffler and R. Zimmermann, World Scientific Publ. Co., Singapore 1996 (p. 2937). [16] J. L. Farvacque and B. PoÈdoÈr, phys. stat. sol. (b) 167, 687 (1991). | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | da0d631e-edbf-434e-8bfd-d31fb2921840 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | da0d631e-edbf-434e-8bfd-d31fb2921840 |
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