Noise performance of submicron HEMT channels under low power consumption operation
| dc.book.title | IEEE MTT-S International Microwave Symposium Digest | |
| dc.contributor.author | Miranda Pantoja, José Miguel | |
| dc.contributor.author | Sebastián Franco, José Luis | |
| dc.date.accessioned | 2023-06-20T21:08:47Z | |
| dc.date.available | 2023-06-20T21:08:47Z | |
| dc.date.issued | 2000 | |
| dc.description | IEEE MTT-S International Microwave Symposium (IMS2000) (2000. Boston, USA). © 2000 IEEE. This work has partially been funded by the Swedish Foundation for Scientific Research through the project "Design of 60 GHz WLANs". Paulius Sakalas, Christian Fager, and Ilcho Angelov are acknowledged for their valuable comments. | |
| dc.description.abstract | We have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been verified from near pinchoff conditions up to usual bias voltages. An overshoot in the drain temperature as a function of the drain voltage has been observed at low drain currents in deep submicron gate lenght devices. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Swedish Foundation for Scientific Research | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24712 | |
| dc.identifier.isbn | 0-7803-5687-X | |
| dc.identifier.officialurl | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=863582 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/60815 | |
| dc.language.iso | eng | |
| dc.page.final | 1236 | |
| dc.page.initial | 1233 | |
| dc.page.total | 4 | |
| dc.publication.place | Boston, USA | |
| dc.publisher | IEEE | |
| dc.relation.projectID | Design of 60 GHz WLANs | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Models. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Noise performance of submicron HEMT channels under low power consumption operation | |
| dc.type | book part | |
| dc.volume.number | 1-3 | |
| dcterms.references | [l] A. Cappy, "Noise Modeling and Measurement Techniques", IEEE Trans. on Microwave Theory and Techniques, 36 (l), pp. 1-10, 1988. [2] F. Danneville, H. Happy, G. Dambrine, 3. M. Belquin, A. Cappy, "Microscopic noise modeling and macroscopic noise models; How good a connection?" IEEE Trans. on Electron Devices, vol41 no 5, pp. 779-786, 1994. [3] M. W. Pospieszalski, "On the Measurement of Noise Parameters of Microwave Two-Port", IEEE Trans. on MTT, vol 34 no 4, pp. 256-458, 1986. [4] R. A Pucel, H. A. Haus, H. Statz, "Signal and noise properties of gallium arsenide microwave field effect transistors", Advances in Electronics and Electron Physics, vol 38, New York Academic Press, 1975. [5] P. Heymann, M. Rudolph, H. Prinzler, R. Doemer, L. Klapproth, G. Bok, "Experimental Evaluation of Microwave Field Effect Transistor Noise Models", IEEE Trans on MTT, vol 47 no 2, pp. 156-163,1999. [6] M. García, J. Stenarson, K. Yhland, H. Zirath, "A New Extraction Method for the Two-Parameter FET Temperature Noise Model" IEEE Trans on MTT, vol46 no 11, pp. 1679-1685, 1998. [7] N. Rorsman, M. Garcia, C. Karlsson, H. Zirath, "Accurate Small Signal Modeling of HFET's for Millimeter Wave Applications", IEEE Trans. on M", vol 44 no 3, pp. 432-437, 1996. [8] M. García, N. Rorsman, K. Yhland, H. Zirath, I. Angelov, "Fast, Automatic and Accurate HFET Small-Signal Characterization", Microwave Journal, pp. 102-117, July 1997. [9] M. W. Pospieszalski, "Modeling of Noise Paramaters of MESFETs and MODFET and their Frequency and Temperature Dependence", IEEE Trans. on MTT, vol 37 no 9, pp. 1340-1350, 1989. [l0] I. M. Miranda, H. Zirath, J. L. Sebastib, "Noise Modeling of 0.15 pm Gate Length HEh4Ts based on AlGaAshGaAs Channels", Proceedings of the GHz-2000 International Conference, Goteborg, Sweden, March 2000. [11] A. Matulionis, "Hot-electron noise in HEMT channels and other 2-DEG structures" (invited paper), in Proc. 5th European Gallium Arsenide and related 111-V compounds Applications Symposium - GaAs'97, Bologna, Italy, pp. 165-174, September 3-5, 1997. [12] V. Aninkevicius, B. Henle, E. Kohn, W. Leitch, J. Liberis, A. Matulionis, P. Sakalas, "Hot-electron noise in InGaAs - based channels", Proc. of 20th Workshop on Compound Semiconductor Devices and Integrated Circuits, Vilnius University Press, pp. 34-35, 1996. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 328f9716-2012-44f9-aacc-ef8d48782a77 | |
| relation.isAuthorOfPublication | 53e43c76-7bce-46fd-9520-0edb4620c996 | |
| relation.isAuthorOfPublication.latestForDiscovery | 328f9716-2012-44f9-aacc-ef8d48782a77 |
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