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Load resistor as a worst-case parameter to investigate single-event transients in analog electronic devices

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dc.book.title2011 Spanish Conference on Electron Devices (CDE 2011)
dc.conference.placePalma de Mallorca (Spain)
dc.conference.titleElectron Devices (CDE), 2011 Spanish Conference on
dc.contributor.authorLópez Calle, Isabel
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorGonzález Izquierdo, Jesús
dc.date.accessioned2023-06-20T05:46:41Z
dc.date.available2023-06-20T05:46:41Z
dc.date.issued2011-02-08
dc.description© IEEE. Spanish Conference on Electron Devices (CDE) (8.2011. Palma de Mallorca, España)
dc.description.abstractOne of the main phenomena that commit the reliability of analog electronic systems working in the outer space is the presence of energetic ions that produce spurious transients after crossing the device. These pulses are transmitted to the network loading the device and can eventually lead to dangerous situations as it has been observed in some spatial missions. This paper shows how the value of the resistor loading the device can affect the shape of the transients.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.departmentDepto. de Química Física
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyFac. de Ciencias Químicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/29155
dc.identifier.doi10.1109/SCED.2011.5744202
dc.identifier.isbn978-1-4244-7863-7
dc.identifier.officialurlhttp://dx.doi.org/10.1109/SCED.2011.5744202
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/45552
dc.language.isoeng
dc.page.final4
dc.page.initial1
dc.page.total4
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.ispartofseriesSpanish Conference on Electron Devices
dc.relation.projectIDAYA2009-13300-C03-02
dc.relation.projectIDConsolider SAUUL CSD2007-00013
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordAnalogue circuits
dc.subject.keywordCircuit reliability
dc.subject.keywordResistors
dc.subject.keywordTransients
dc.subject.keywordAnalog electronic devices
dc.subject.keywordAnalog electronic systems reliability
dc.subject.keywordEnergetic ions
dc.subject.keywordLoad resistor
dc.subject.keywordNetwork loading
dc.subject.keywordSingle-event transients
dc.subject.keywordSpatial missions
dc.subject.keywordSpurious transients
dc.subject.keywordWorst-case parameter
dc.subject.keywordOperational amplifiers
dc.subject.keywordSPICE
dc.subject.keywordShape
dc.subject.keywordTransient analysis
dc.subject.keywordTransistors
dc.subject.keywordVoltage measurement
dc.subject.keywordAnalog devices
dc.subject.keywordBipolar technology
dc.subject.keywordLaser tests
dc.subject.keywordSingle event transients
dc.subject.keywordSystem reliability
dc.subject.keywordTwo-photon absorption
dc.subject.ucmElectrónica (Física)
dc.subject.ucmÓptica (Física)
dc.subject.ucmCircuitos integrados
dc.subject.unesco2209.19 Óptica Física
dc.subject.unesco2203.07 Circuitos Integrados
dc.titleLoad resistor as a worst-case parameter to investigate single-event transients in analog electronic devices
dc.typebook part
dcterms.references1] R. Velazco, F. J. Franco, "Single event effects on digital integrated Circuits: origins and mitigation techniques", IEEE International Symposium on Industrial Electronics, Vigo (Spain), pp. 3322-3327, July 2007. [2] D. McMorrow, W. Lotshaw, J. Melinger, S. Buchner, and R. Pease, "Subbandgap laser-induced single event effects: carrier generation via two-photon absorption," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 3002-3008, December 2002. [3] R. Koga, S. Crain, K. Crawford, S. Moss, S. LaLumondiere, and J. J. Howard, "Single event transient (SET) sensitivity of radiation hardened and COTS voltage comparators," in IEEE Radiation Effects Data Workshop Records, July 2000, pp. 53-60. [4] C. Poivey, J. J. Howard, S. Buchner, K. LaBel, J. Forney, H. Kim, and A. Assad, "Development of a test methodology for single-event transients (SETs) in linear devices," IEEE Transactions on Nuclear Science, vol. 48, no. 6, pp. 2180-2186, December 2001. [5] S. LaLumondiere, R. Koga, P. Yu, M. Maher, and S. Moss, "Laser induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 3121-3128, December 2002. [6]M. Bernard, L. Dusseau, S. Buchner, D. McMorrow, R. Ecoffet, J. Boch, J.-R. Vaille, R. Schrimpf, and K. LaBel, "Impact of total ionizing dose on the analog single event transient sensitivity of a linear bipolar integrated circuit," IEEE Transactions on Nuclear Science, vol. 54, no. 6, pp. 2534-2540, December 2007. (Pubitemid 350274116) [7] D. Chen, S. Buchner, A. Phan, H. Kim, A. Sternberg, D. McMorrow, and K. LaBel, "The effects of elevated temperature on pulsed-laserinduced single event transients in analog devices," IEEE Transactions on Nuclear Science, vol. 56, no. 6, pp. 3138-3144, December 2009. [8] R. Pease, A. Sternberg, L. Massengill, R. Schrimpf, S. Buchner, M. Savage, J. Titus, and T. Turflinger, "Critical charge for single-event transients (SETs) in bipolar linear circuits," IEEE Transactions on Nuclear Science, vol. 48, no. 6, pp. 1966-1972, December 2001. [9] A. Sternberg, L. Massengill, R. Schrimpf, and P. Calvel, "Application determination of single-event transient characteristics in the LM111 comparator," IEEE Transactions on Nuclear Science, vol. 48, no. 6, pp. 1855-1858, December 2001. [10] M. Savage, T. Turflinger, J. Titus, H. Barsun, A. Sternberg, Y. Boulghassoul, and L. Massengill, "Variations in SET pulse shapes in the LM124A and LM111," in IEEE Radiation Effects Data Workshop Records, July 2002, pp. 75-81. [11] M. Savage, T. Turflinger, J. Titus, R. Pease, and C. Poivey, "Characterization of SET response of the LM124A the LM111, and the LM6144," in IEEE Radiation Effects Data Workshop Records, July 2003, pp. 121-126. [12] "National Semiconductors's website. " This document is avalaible onlineat http://www. national. com/mpf/LM/LM124. html. [13] A. L. Sternberg, et al., "The role of parasitic elements in the single-event transient response of linear circuits," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 3115-3120, December 2002. [14] P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd ed. USA: John Wiley & Sons Inc., 1993, ch. 2, pp. 123-147. [15] "National Semiconductors's website. " This document is avalaible onlineat http://www. national. com/mpf/LM/LM111. html.
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