Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Synaptic behaviour in ZnO–rGO composites thin film memristor

Thumbnail Image

Download

downoload4_Synaptic Behaviour (pre-final).pdf (244.38 KB)

Official URL

https://doi.org/10.1049/el.2016.3655

Full text at PDC

Publication date

2017

Authors

Advisors (or tutors)

Editors

Journal Title

Journal ISSN

Volume Title

Publisher

Wiley
Citations
Google Scholar
Exportar
DC QDC MarcXML RDF MODS METS ORE-ATOM

URI

https://hdl.handle.net/20.500.14352/117281

Citation

Khanal, G.M., Acciarito, S., Cardarilli, G.C., Chakraborty, A., Nunzio, L.D., Fazzolari, R., Cristini, A., Re, M. and Susi, G. (2017), Synaptic behaviour in ZnO–rGO composites thin film memristor. Electron. Lett., 53: 296-298. https://doi.org/10.1049/el.2016.3655

Abstract

A zinc oxide (ZnO)-reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike-timing-dependent plasticity, using this device. Furthermore, a circuit on PCB is developed; this circuit can imitate the biological spike firing scheme and activate the memristor synapse. The fabricated device along with the custom made circuit can be extended for developing future neuromorphic circuit applications.

Research Projects

Organizational Units

Journal Issue

Description

UCM subjects

Física (Física), Electrónica (Física)

Unesco subjects

22 Física, 2211.25 Semiconductores, 3307 Tecnología Electrónica

Keywords

Collections

Artículos