Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Prado Millán, Álvaro Del | |
| dc.contributor.author | San Andrés Serrano, Enrique | |
| dc.date.accessioned | 2023-06-20T10:44:53Z | |
| dc.date.available | 2023-06-20T10:44:53Z | |
| dc.date.issued | 2003-05 | |
| dc.description | International Conference on Materials for Microelectronics and Nanoengineering (4. 2002. Espoo, Finlandia). © 2003 Kluwer Academic Publishers. The authors would like to thank C. A. I. de Impalntación Iónica from the Complutense University in Madrid for technical assitance with the ECR-CVD system. This research was partially supported by the Spanish DGESIC under Grants No. TIC 1FD79-2085 and TIC 98/0740. | |
| dc.description.abstract | In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor deposition method. C-V results show that samples without SiO2 have more defects than those with SiO2. Deep-level transient spectroscopy and conductance transient measurements demonstrate that as for the samples containing the SiO2 film, these defects are mostly concentrated in the insulator/semiconductor interface, whereas in the other case defects are spatially distributed into the insulator. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Spanish DGESIC | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26141 | |
| dc.identifier.doi | 10.1023/A:1023907508286 | |
| dc.identifier.issn | 0957-4522 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1023/A:1023907508286 | |
| dc.identifier.relatedurl | http://link.springer.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/51136 | |
| dc.issue.number | 5-7 | |
| dc.journal.title | Journal of Materials Science: Materials in Electronics | |
| dc.language.iso | eng | |
| dc.page.final | 290 | |
| dc.page.initial | 287 | |
| dc.publisher | Kluwer Academic Publ. | |
| dc.relation.projectID | TIC 1FD79-2085 | |
| dc.relation.projectID | TIC 98/0740 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Insulator-Semiconductor Structures | |
| dc.subject.keyword | Conductance Transient Techniques | |
| dc.subject.keyword | C-V | |
| dc.subject.keyword | Al/SiNx | |
| dc.subject.keyword | Plasma | |
| dc.subject.keyword | H/InP | |
| dc.subject.keyword | Deposition | |
| dc.subject.keyword | Quality | |
| dc.subject.keyword | DLTS. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films | |
| dc.type | journal article | |
| dc.volume.number | 14 | |
| dcterms.references | 1. D. G. Park, M. Tao, D. Li, A. E. Botchkarev, Z. Fan, Z. Wang, S. N. Mohammed, A. Rockett, J. R. Abelson and H. Morkoch, J. Vac. Sci. Technol. B, 14 (1996) 2674. 2. K. H. Chew, J. Chen, R. C. Woods and J. L. Sohet, J. Vac. Sci. Technol. A, 13 (1995) 2483. 3. S. Dueñas, R. Peláez, H. Castán, R. Pinacho, L. Quintanilla, J. Barbolla, I. Mártil and G. González-Díaz, Appl. Phys. Lett., 71 (1997) 826. 4. L. He, H. Hasegawa, T. Sawada and H. Ohno, J. Appl. Phys., 63 (1988) 2120. 5. L. He, H. Hasegawa, T. Sawada and H. Ohno, Jpn. J. Appl. Phys., 27 (1988) 512. 6. E. H. Nicollian and J. R. Brews, “MOS Physics and Technology” (Wiley, New York, 1982). 7. H. Castán, S. Dueñas, J. Barbolla, E. Redondo, N. Blanco, I. Mártil and G. González-Díaz, Microelectron. Reliab., 40 (2000) 845. 8. H. Castán, S. Dueñas, J. Barbolla, E. Redondo, I. Mártil and G. González-Díaz, Jpn. J. Appl. Phys., 39 (2000) 6212. 9. H. Castán, S. Dueñas, J. Barbolla, N. Blanco, I. Mártil and G. González-Díaz, ibid. 40 (2001) 4479. 10. H. Castán, S. Dueñas, J. Barbolla, E. Redondo, I. Mártil and G. González-Díaz, J. Mater. Sci: Mater. Electron., 12 (2001) 263. | |
| dspace.entity.type | Publication | |
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| relation.isAuthorOfPublication.latestForDiscovery | a5ab602d-705f-4080-b4eb-53772168a203 |
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