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Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

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dc.contributor.authorPlaza, J. L.
dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorCastaño, J. L.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:52Z
dc.date.available2023-06-20T18:55:52Z
dc.date.issued1999-03
dc.description© 1999 Elsevier Science B.V. Conference on Crystal Growth, held in Conjunction with the 10th International Conference on Vapor Growth and Epitaxy (ICCG-12/ICVGE-10) (12. 1998. Jerusalen). This work has been supported by CICYT (ESP95-0148 and 95-0086-OP) and DGES PB96- 0639 (CICYT, Spain).
dc.description.abstractThe distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCICYT, Spain
dc.description.sponsorshipDGES
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24710
dc.identifier.doi10.1016/S0022-0248(98)01100-2
dc.identifier.issn0022-0248
dc.identifier.officialurlhttp://www.sciencedirect.com/science/article/pii/S0022024898011002
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58947
dc.issue.numberpt. 1
dc.journal.titleJournal of crystal growthJ
dc.language.isoeng
dc.page.final383
dc.page.initial379
dc.publisherElsever science BV
dc.relation.projectIDESP95-0148
dc.relation.projectID95-0086-OP
dc.relation.projectIDPB96-0639
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordLiquid-Phase Epitaxy
dc.subject.keywordGallium Antimonide
dc.subject.keywordLongitudinal Macrosegregation
dc.subject.keywordThermal-Convection
dc.subject.keywordErbium
dc.subject.keywordGaas
dc.subject.keywordPhotoluminescence
dc.subject.ucmFísica de materiales
dc.titleEffect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
dc.typejournal article
dc.volume.number198
dcterms.references[1] W.T. Tsang, R.A. Logan, Appl. Phys. Lett. 49 (1986) 1686. [2] J.P. van dre Ziel, M.G. Oberg, R.A. Logan, Appl. Phys. Lett. 50 (1987) 1313. [3] H. Nakagome, K. Takahei, Y. Homma, J. Crystal Growth 85 (1987) 345. [4] R.S. Smith, H.P. Muller, H. Ennen, D. Wennekess, M. Maier, Appl. Phys. Lett. 50 (1987) 49. [5] H. Nakagome, K. Uwai, K. Takahei, Appl. Phys. Lett. 53 (1988) 1726. [6] K. Takahei, P.S. Whitney, H. Nakagome, K. Uwai, J. Appl. Phys. 65 (1989) 3. [7] T. Benyattou, D. Seghier, G. Guillot, R. Moerge, P. Galtier, M.N. Charasse, Appl. Phys. Lett. 60 (1992) 350. [8] M.C. Wu, C.M. Chiu, J. Appl. Phys. 73 (1993) 1. [9] P. Whitney, K. Uwai, H. Nakagome, K. Takahei, presented at the 46th Device Research Conf. Boulder, Colorado, 1988. [10] J. Raczynska, K. Fronc, J.M. Langer, A. Lemanska, A. Stapor, Appl. Phys. Lett. 53 (1988) 761. [11] C.M. Chiu, M.C. Wu, C.C. Chang, Sol. Stat. Electron. 36 (1993) 1101. [12] U.N. Roy, S. Basu, Bull. Mater. Sci. 13 (1990) 27. [13] See D.T.J. Hurle, Handbook of Crystal Growth, vol. 2a, Ch. 5, Ch. 12 and references therein, North-Holland, Amsterdam, 1994. [14] P.S. Dutta, K.S. Sangunni, H.L. Bhat, V. Kumar, J. Crystal Growth 141 (1994) 44. [15] P.S. Dutta, K.S. Koteswara Rao, H.L. Bhat, K. Gopalakrihna Naik, V. Kumar, J. Crystal Growth 155 (1995). [16] B. Me«ndez, J. Piqueras, J. Appl. Phys. 72 (1992) 4275. [17] D. Camel, J.J. Favier, J. Crystal Growth 67 (1984) 42. [18] D. Camel, J.J. Favier, J. Crystal Growth 67 (1984) 57. [19] W. Zhang, S. Yan, Z. Ji, J. Crystal Growth 169 (1996) 598. [20] D.T.J. Hurle, Handbook of Crystal Growth, vol. 2b, Ch. 12, North-Holland, Amsterdam, 1994. [21] Yuh-Maoh Sun, Meng-Chyi Wu, Yuan-Tzu Ting, J. Crystal Growth 158 (1996) 449. [22] B. Me«ndez, P.S. Dutta, J. Piqueras, E. Die«guez, Appl. Phys. Lett. 67 (1995) 2648. [23] F. Hulliger, in: K.A. Gshincider Jr., I. Eyring (Eds.), Handbook on the Physics and Chemistry of Rare Earths, vol. 4, North-Holland, Amsterdam, 1979, pp. 153Ð236
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