Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

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dc.contributor.authorPlaza, J. L.
dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorCastaño, J. L.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:52Z
dc.date.available2023-06-20T18:55:52Z
dc.date.issued1999-03
dc.description© 1999 Elsevier Science B.V. Conference on Crystal Growth, held in Conjunction with the 10th International Conference on Vapor Growth and Epitaxy (ICCG-12/ICVGE-10) (12. 1998. Jerusalen). This work has been supported by CICYT (ESP95-0148 and 95-0086-OP) and DGES PB96- 0639 (CICYT, Spain).
dc.description.abstractThe distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCICYT, Spain
dc.description.sponsorshipDGES
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24710
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dc.identifier.doi10.1016/S0022-0248(98)01100-2
dc.identifier.issn0022-0248
dc.identifier.officialurlhttp://www.sciencedirect.com/science/article/pii/S0022024898011002
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58947
dc.issue.numberpt. 1
dc.journal.titleJournal of crystal growthJ
dc.language.isoeng
dc.page.final383
dc.page.initial379
dc.publisherElsever science BV
dc.relation.projectIDESP95-0148
dc.relation.projectID95-0086-OP
dc.relation.projectIDPB96-0639
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordLiquid-Phase Epitaxy
dc.subject.keywordGallium Antimonide
dc.subject.keywordLongitudinal Macrosegregation
dc.subject.keywordThermal-Convection
dc.subject.keywordErbium
dc.subject.keywordGaas
dc.subject.keywordPhotoluminescence
dc.subject.ucmFísica de materiales
dc.titleEffect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
dc.typejournal article
dc.volume.number198
dspace.entity.typePublication
relation.isAuthorOfPublicationc834e5a4-3450-4ff7-8ca1-663a43f050bb
relation.isAuthorOfPublication465cfd5b-6dd4-4a48-a6e3-160df06f7046
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb
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