Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
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1999
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Elsever science BV
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Abstract
The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
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© 1999 Elsevier Science B.V.
Conference on Crystal Growth, held in Conjunction with the 10th International Conference on Vapor Growth and Epitaxy (ICCG-12/ICVGE-10) (12. 1998. Jerusalen).
This work has been supported by CICYT (ESP95-0148 and 95-0086-OP) and DGES PB96-
0639 (CICYT, Spain).