Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
| dc.book.title | Microscopy of Semiconducting Materials 1989 | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
| dc.contributor.author | De Diego, N. | |
| dc.date.accessioned | 2023-06-20T18:57:36Z | |
| dc.date.available | 2023-06-20T18:57:36Z | |
| dc.date.issued | 1988-11-01 | |
| dc.description | © 1988 Amer Inst Physics. The authors thank Wacker-Chemitronic (Dr K. Löhnert) for providing the samples. The help of Dr. J. Llopis during this work is acknowledged. This work was partially supported by Comisión Interministerial de Ciencia y Tecnología (Project No. PB86-0151). | |
| dc.description.abstract | Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Comisión Interministerial de Ciencia y Tecnología | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25136 | |
| dc.identifier.doi | 10.1063/1.341269 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.341269 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59001 | |
| dc.issue.number | 9 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 4468 | |
| dc.page.initial | 4466 | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | PB-86-0151 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Physics | |
| dc.subject.keyword | Applied | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence | |
| dc.type | journal article | |
| dc.volume.number | 64 | |
| dcterms.references | 1. R.T. Chen and D.E. Holmes, J. Cryst. Growth 61, 111 (1986) 2. M. Dussac, M. Dupuy, and E. Mplva, in Proceedings of the Intennational Symposium on Defect Recognition and Image Processing in III-V Compounds, Montpellier, 1985, edited by J. P. Fillard (Elsevier, Amsterdam, 1985), p. 209. 3. M. S. Skolnick , in Proceedings of the International Aymposium on Defect Recognition and Image Proceesing in III-V Compounds, Montpellier, 1985, edited by J. P. Fillard (Elsevier, Amsterdam, 1985), p. 165. 4. J. Windscheif, M. Beaumler, and U. Kaufmann, App. Phys. Lett 46, 661 (1985). 5. H. Ch. alt and G. Packeiser, J.App. Phys. 60, 2954 (1986). 6.J. Windscheif and W. Wettlling, in Gallium Arsenide and Related Compounds, Las Vegas, 1986, Inst. Phys.Conf. ser. 83 (Institute of Physi, Briston, 1987). p. 197. 7. T. Kamejima, F. Shimura, Y. Matsumoto, H. Watanabe and J. Matsui, Jpn. J. Appl. Phys,21, L227 (1982). 8. M. Tjima, Jpn. . J. Appl. Phys. 21, L227 (1982). 9. M. Tjima in defets and Properties on Semiconductors: Defec Engineering, edited by J. Chikawa, K. Sumino, and K. Wada (KTK scientific, Tokyo, 1987) p. 37. 10. A. K. Chin , R. Caruso, M. S. s. Young, and A. R. Von Neida, App. Phys. Lett. 45, 552 (1984). 11. B. Wakefield, P. A.Leig, M. H. Lyons , and C. R. Elliot, Appl. Phys. Lett. 45, 66 (1984). 12. C. A. Warwick and G. T. Brown, Appl. Pjys. Lett, 46, 574 (1985). 13. J. Ding, J. S. C. Chang, and M. Bujatti, Appl. Phys. Lett. 50, 1089 (1987). 14. D. A. Shaw and P. R. Thornton, J. Mater. Sci. 3. 507 (1968). 15. L. J. Balk, E. Kubalek, and E. Menzel , in Scanning Electron Microscopy/ 1976, edited by O. JOhari (SEM, Chicago, 1976), p. 257. 16. J. Llopis and J. Piqueras, J. Appl. Phys. 54,4570(1983). 17. M. Tajima, Y. Okada, and Y. Tokumaru, Jpn. J. Appl. 17, Suppl. 17-1, 93 (1978). 18. C. Werkhoven , J. H. T. Hengst, and C. van Opdorp, Appl. Phys. Lett. 35, 136 (1979). 19. W. Frank and U. Gösele, Physica 116B, 420 (1983). 20. F. Dominguez-Adame, J. Piqueras, N. de Diego, and J. Llopis, J. Appl. Phys. 63, 2583 (1988). 21. B. Hughes and G. H. Naraynan, Phys, Status Solidi A 46, 627 (1978). 22. P. Hautojärvi, P. Moser, M. Stucky, C. Corbel, and F. Plazaola, Appl. Phys. Lett 48, 809 (1986). 23. G. Dlublek, O. Brümmer, F. Plazaola, and Hautojärvi, J. Phys. C19, 331 (1986). 24. M. Stucky, R. Paulin, B. Geffroy, C. Corbel , and Suskij, in Proceedings of the 7th International Conference on Positron Annihilation, New Delhi, 1985 (World Scientific, Singapore, 1985), pp. 714-716. 25. D.E. Holmes, R. T. Chen, and J. Young, Appl. Phys Lett. 42,419 (1983). 26. M. Henini, B. Tuck, and C. J. Paull, Solid-State Electron, 29, 483 (1986). | |
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