Degradation of instrumentation amplifiers due to the nonionizing energy loss damage
| dc.contributor.author | Franco Peláez, Francisco Javier | |
| dc.contributor.author | Lozano Rogado, Jesús | |
| dc.contributor.author | Santos Blanco, José Pedro | |
| dc.contributor.author | Agapito Serrano, Juan Andrés | |
| dc.date.accessioned | 2023-06-20T10:50:46Z | |
| dc.date.available | 2023-06-20T10:50:46Z | |
| dc.date.issued | 2003-12 | |
| dc.description | © IEEE TNS | |
| dc.description.abstract | Tests on instrumentation amplifiers exposed to neutron radiation have been done. The tested devices were commercial instrumentation amplifiers or designed with rad-tol commercial operational amplifiers. The results show changes in frequency behavior, gain, offset voltage, output saturation voltages, and quiescent current. The radiation tolerance is bigger in amplifiers with JFET input stage or with large frequency bandwidth and is smaller if the amplifier has been designed for reducing the power consumption. The IAs built with OPAMPs have a higher tolerance than the commercial ones, but they have disadvantages: high temperature influence, low CMRR, etc. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Ministerio de Educación y Ciencia | |
| dc.description.sponsorship | CERN | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/29101 | |
| dc.identifier.doi | 10.1109/TNS.2003.820628 | |
| dc.identifier.issn | 0018-9499 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1109/TNS.2003.820628 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/51327 | |
| dc.issue.number | 6 | |
| dc.journal.title | IEEE Transactions on Nuclear Science | |
| dc.language.iso | eng | |
| dc.page.final | 2440 | |
| dc.page.initial | 2433 | |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | |
| dc.relation.projectID | TIC98-0737 | |
| dc.relation.projectID | K476/LHC | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537.8 | |
| dc.subject.keyword | Amplification | |
| dc.subject.keyword | Instrumentation amplifiers | |
| dc.subject.keyword | Junction gate field effect transistors | |
| dc.subject.keyword | Neutron effects | |
| dc.subject.keyword | Nuclear electronics | |
| dc.subject.keyword | nuclear instrumentation | |
| dc.subject.keyword | operational amplifiers | |
| dc.subject.keyword | COTS | |
| dc.subject.keyword | JFET input stage | |
| dc.subject.keyword | displacement damage | |
| dc.subject.keyword | frequency behavior | |
| dc.subject.keyword | gain | |
| dc.subject.keyword | high temperature influence | |
| dc.subject.keyword | instrumentation amplifiers degradation | |
| dc.subject.keyword | large frequency bandwidth | |
| dc.subject.keyword | low CMRR | |
| dc.subject.keyword | neutron radiation | |
| dc.subject.keyword | neutron tolerance | |
| dc.subject.keyword | nonionizing energy loss damage tests | |
| dc.subject.keyword | offset voltage | |
| dc.subject.keyword | output saturation voltages | |
| dc.subject.keyword | power consumption | |
| dc.subject.keyword | quiescent current | |
| dc.subject.keyword | rad-tol commercial operational amplifiers | |
| dc.subject.keyword | radiation tolerance | |
| dc.subject.keyword | Bandwidth | |
| dc.subject.keyword | Degradation | |
| dc.subject.keyword | Energy loss | |
| dc.subject.keyword | Frequency | |
| dc.subject.keyword | Instruments | |
| dc.subject.keyword | Neutrons | |
| dc.subject.keyword | Operational amplifiers | |
| dc.subject.keyword | Power amplifiers | |
| dc.subject.keyword | Testing | |
| dc.subject.keyword | Voltage | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.ucm | Radiactividad | |
| dc.title | Degradation of instrumentation amplifiers due to the nonionizing energy loss damage | |
| dc.type | journal article | |
| dc.volume.number | 50 | |
| dcterms.references | [1] The LHC Study Group, “The Large Hadron Collider Conceptual Design,” Tech. Rep., 1995. [2] J. R. Riskin, “A User’s Guide to IC Instrumentation Amplifier ,” [On-line] Available: Appl. Notes Analog Devices AN-244; Analog Devices website. [3] C. Kitchin and L. Counts, “A Designer’s Guide to Instrumentation Amplifiers,” [Online] Available: Appl. Guide Analog Devices; Analog Devices website, Tech. Rep., 2000. [4] P. Horowitz and W. Hill, The Art of Electronics, 2nd ed. Cambridge Univ. Press, 1990. [5] “Op Amp Circuit Collection,” [Online] Available: Appl. Note National Semiconductor AN-31; National Semiconductor website, Oct. 2000. [6] J. A. Agapito et al., “Instrumentation amplifiers and voltage controlled current sources for LHC cryogenic system,” in 6th Workshop LHC Experiments (LEB’00), Sep. 2000, pp. 275–280. [7] J. A. Agapito et al., “Preliminary test for radiation tolerant electronic components for the LHC cryogenic system,” in 5th Workshop LHC Experiments (LEB’99), Sep. 1999, pp. 475–479. [8] G. Messenger and M. Ash, The Effects of Radiation on Electronic Systems, 2nd ed. Van Nostrand Reinhold, 1992. [9] L. Adams, “Guidelines for the Use of Electronic Components in the Space Radiation Environment,” Tech. Rep., 2000. [10] F. Faccio, “COTS for LHC radiation environment: The rules of the game,” in 6th Workshop LHC Experiments (LEB’00), Sep. 2000, pp. 50–63. [11] H. J. Barnaby et al., “Identification of degradation mechanisms in a bipolar linear voltage comparator trough correlation of transistor and circuit response,” IEEE Trans. Nucl. Sci., vol. 47, pp. 1666–1673, Dec. 1999. [12]H. J. Barnaby et al., “Origins of total dose response variability in linear bipolar microcircuits,” IEEE Trans. Nucl. Sci., vol. 46, pp. 2342–2349, Dec. 1999. [13] F. Saigné et al., “Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs,” IEEE Trans. Nucl. Sci., vol. 47, pp. 2329–2333, Dec. 2000. [14] D. Christiansen, Electronics Engineers’ Handbook, 4th ed. McGraw-Hill, 1997. [15] E. Greeneich, Analog Integrated Circuits, London, U.K.: Chapman Hall, 1997. [16] R. Palmer, “DC parameters: Input offset voltage (VIO),” [Online] Available: Appl. Note Texas Instruments; Texas Instruments website, Mar. 2001. [17] B. Ngouyen and W. D. Smith, “Nulling input offset voltage of operational amplifiers,” [Online] Available: Appl. Note Texas Instruments; Texas Instruments website, Aug. 2000. [18] D. Neamen, Semiconductor Physics and Devices: Basic Principles, 2nd ed. McGraw-Hill, 1992. [19] B. G. Rax, A. H. Johnston, and T. Miyahira, “Displacement damage in bipolar linear integrated circuits,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1660 1665, Dec. 1999. [20] H. J. Barnaby, R. D. Schrimpf, R. D. Sternberg, V. Berthe, C. R. Cirba, and R. L. Pease, “Proton radiation response mechanisms in bipolar analog circuits,” IEEE Trans. Nucl. Sci., vol. 48, pp. 2074–2080, Dec. 2001. [21] [Online]. Available: http://erric.dasiac.com. [22] “Jet Propulsion Laboratory Radata Interactive ,” [Online]. Available: http://radnet.jpl.nasa.gov. [23] W. K. Chien, The VLSI Handbook. CRC Press, 2000. [24] E. Nash, “Errors and error budget analysis in instrumentation amplifiers applications,” [Online] Available: Appl. Note from Analog Devices; Analog Devices website. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 662ba05f-c2fc-4ad7-9203-36924c80791a | |
| relation.isAuthorOfPublication.latestForDiscovery | 662ba05f-c2fc-4ad7-9203-36924c80791a |
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