Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals
Loading...
Download
Official URL
Full text at PDC
Publication date
2002
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Physics
Citations
Exportar
Citation
Abstract
The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.
Description
© 2002 IOP Publishing Ltd.
This work was supported by MCYT (Project MAT2000-2119).
Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)