Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals
| dc.contributor.author | Hidalgo Alcalde, Pedro | |
| dc.contributor.author | Plaza, J. L. | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Dieguez, E. | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T18:55:08Z | |
| dc.date.available | 2023-06-20T18:55:08Z | |
| dc.date.issued | 2002-12-16 | |
| dc.description | © 2002 IOP Publishing Ltd. This work was supported by MCYT (Project MAT2000-2119). Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia) | |
| dc.description.abstract | The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | MCYT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24424 | |
| dc.identifier.doi | 10.1088/0953-8984/14/48/370 | |
| dc.identifier.issn | 0953-8984 | |
| dc.identifier.officialurl | http://iopscience.iop.org/0953-8984/14/48/370 | |
| dc.identifier.relatedurl | http://iopscience.iop.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58922 | |
| dc.issue.number | 48 | |
| dc.journal.title | Journal of Physics: Condensed Mater | |
| dc.language.iso | eng | |
| dc.page.final | 13215 | |
| dc.page.initial | 13211 | |
| dc.publisher | Institute of Physics | |
| dc.relation.projectID | MAT 2000-2119 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Doped Gasb | |
| dc.subject.keyword | Erbium | |
| dc.subject.keyword | Luminescence | |
| dc.subject.keyword | Centers | |
| dc.subject.keyword | Silicon | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals | |
| dc.type | journal article | |
| dc.volume.number | 14 | |
| dcterms.references | [1] Michel J, Benton J L, Ferrante R F, Jacobson D C, Eaglesham D J, Fitzgerald E A, Xie Y H, Poate J M and Kimerling L C 1991 J. Appl. Phys. 70 2672 [2] Suezawa M and Sumino K 1994 Japan. J. Appl. Phys. 33 L1782 [3] Zavada J M and Zhang D 1995 Solid State Electron. 38 1285 [4] Plaza J L, Hidalgo P, M´endez B, Piqueras J and Diéguez E 2002 Mater. Sci. Eng. B at press [5] Pollman A 1997 J. Appl. Phys. 82 1 [6] Lebedev A I and Strel’nikova I A 1979 Sov. Phys.–Semicond. 13 229 [7] Dutta P S, Méndez B, Piqueras J, Diéguez E and Bhat H L 1996 J. Appl. Phys. 80 1112 [8] Méndez B, Piqueras J, Dutta P S and Diéguez E 1995 Appl. Phys. Lett. 67 2468 [9] Sun Y and Wu M 1995 J. Appl. Phys. 78 6691 [10] Sun Y, Wu M and Ting Y 1996 J. Cryst. Growth 85 449 [11] Hidalgo P, Méndez B, Piqueras J, Plaza J and Diéguez E 1998 Semicond. Sci. Technol. 13 1431 [12] Yacobi B G and Holt D B 1990 Cathodoluminescence Microscopy of Inorganic Solids (New York: Plenum) [13] Cusano D A 1964 Solid State Commun. 2 353 | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | c834e5a4-3450-4ff7-8ca1-663a43f050bb | |
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| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | c834e5a4-3450-4ff7-8ca1-663a43f050bb |
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