Publication:
CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres

Loading...
Thumbnail Image
Full text at PDC
Publication Date
1987-11-15
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Citations
Google Scholar
Research Projects
Organizational Units
Journal Issue
Abstract
Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of stoichiometry of films giving rise to remarkable changes in the film properties. Variation of substrate temperature causes changes in film composition because of the variation of hydrogen reactivity at the substrate. Measurements of resistivity at variable temperatures indicate a hopping conduction mechanism through gap states for films grown at low temperature (100–250 °C), the existence of three acceptor levels at about 0.046, 0.098, and 0.144 eV above valence band for films grown at intermediate temperature (250–350 °C), and a pseudometallic behavior for film grown at high temperatures (350–450 °C). Chalcopyrite polycrystalline thin films of CuInSe2 with an average grain size of 1 μm, an optical gap of 1.01 eV, and resistivities from 10− 1 to 103 Ω cm can be obtained by adding 1.5% of H2 to the sputtering atmosphere and by varying the substrate temperature from 300 to 400 °C.
Description
© American Institute of Physics.
Unesco subjects
Keywords
Citation
1) R.W. Birkmire, L.C. Dinetta, P.G. Lasswell, J.D. Meakin and J.E. Philips, Sol. Cells, 16, 419 (1986), 2) J. Touzel, A. Foucaran, V. Chen, S. Duchemin, J. Bougonot and M. Savelli, in Proceedings of the 6th European Photovoltaic Solar Energy Conference, London, April 1985, ed. by W. Palz and F.C. Treble (Reidel, Dordrecht, 1985), p. 836. 3)R.A. Mickelsen, W.S. Chen, Y.R. Hisiao and V. Lowe, IEEE Trans. Electron Devices, ED-31, 542 (1984). 4) F. Bonhoure, G. Dagoury, D. Vigner and R. Leseur, Le Vide, les Couces Minces, 207, 541 (1981). 5) J.A. Thornton and T.C. Lommasson, Sol. Cells, 16, 165 (1986). 6) S. Isomura, A. Nagamatsu, K. Shimohara and T. Aono, Sol. Cells, 16, 143 (1986). 7) N. Romero, V. Canevari, G. Sberveglieri, A. Bosio and L. Zanotti, in Proceedings of the 18th IEEE Photovoltaic Specialist Conference, Las Vegas, Nevada, Oct. 1985 (IEEE, New York, 1985), p. 1388. 8) J. Santamaría, E. Iborra, I. Mártil, G. González-Díaz and F. Sánchez-Quesada, in Proceedings of the 7th European Solar Energy Conference, Sevilla, Oct. 1986, ed. by A. Goetzberger, W. Palz and G. Willeke (Reidel, Dordrecht, 1987), P. 1223. 9) L. Stolt, M. Jargelius, J. Hedstrom, D. Sigurd and E. Niemi, in Proccedings of the IEEE Photovoltaic Specialist Conference, Las Vegas Nevada, Oct. 1985 (IEEE, New York, 1985), p. 1047. 10) N. Romero, A. Bosio and V. Canevari, in Proceedings of the 7th European Photovoltaic Solar Energy Conference, Sevilla, Oct. 1986, ed. by A. Goetzberger, W. Palz and G. Willeke (Reidel, Dordrecht, 1987), p. 656. 11) R. Noufi and J. Dick, J. Appl. Phys., 58, 3884 (1985). 12) I. Mártil, G. González-Díaz and F. Sánchez-Quesada, Thin Solid Films, 114, 327 (1984). 13) I. Mártil, G. González-Díaz and F. Sánchez-Quesada, Sol. Energy Mater., 12, 345 (1985). 14) Although no evidence for the presence of binary phases have been found in x-ray diffraction patterns of films produced at low substrate temperatues, this might be because of the poor cyrstallinity exhibited by those samples. In fact, according to a referee's comments, the growth of low-temperature films containing only single-phase CuInSe2 seems to be very unlikely to us. 15) H. Neumann, B. Perlt, N.A.K. Abdul-Hussein, R.D. Tomlinson and A.E. Hill, Cryst. Res. Technol., 17, 469 (1982). 16) G. Nasse and E. Radjai, J. Appl. Phys., 56, 1154 (1984). 17) L.Y. Sum, L.L. Kazmerski, A.H. Clark, P.J. Ireland and D.W. Norton, J. Vac. Sci. Technol., 15, 265 (1978). 18) I. Mártil, G. González-Díaz, F. Sánchez-Quesada and M. Rodríguez-Vidal, Thin Solid Films, 120, 31 (1984). 19) L.L. Kazmerski,M. Hallerdt, P.J. Ireland, R.A. Mickelsen and W.S. Chen, J. Vac. Sci. Technol. A, 1, 395 (1983). 20) N.A.K. Abdul-Hussein, A.N.Y. Samaan, R.D. Tomlinson, A.E. Hill and H. Neuman, Cryst. Res. Technol., 20, 509 (1985). 21) R. Noufi, R. Axton, C. Herrington and S.K. Deb, Appl. Phys. Lett., 45, 668 (1984). 22) M.H. Brodsky, ed., Amorphous Semiconductors, Topics in Applied Physics, Vol. 36 (Springer, Berlin, 1979). 23) R.P. Sharma, A.K. Shukla, A.K. Kapoor, R. Srivastava and P.C. Mathur, J. Appl. Phys., 57, 2026 (1985). 24) A.L. Dawar, A. Kumar, R.P. Hall and P.C. Mathur, Thin Solid Films, 112, 107 (1984). 25) J.W. Orton and M.J. Powell, Rep. Prog. Phys., 43, 1263 (1980). 26) C. Rincón, J. González and G. Sánchez-Pérez, J. Appl. Phys., 54, 6634 (1983). 27) T. Datta, R. Noufi and S.K. Deb, Appl. Phys. Lett., 47, 1102 (1985).
Collections