Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.date.accessioned | 2023-06-20T19:00:33Z | |
| dc.date.available | 2023-06-20T19:00:33Z | |
| dc.date.issued | 2002-11-20 | |
| dc.description | IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002) (8. 2002. Xian-Peoples, China). © World Scientific Publishing Company. This work was partially by DGICYT grant PB97-1254 and by CICYT grant TIC-98/0740. One of us (S.H.) acknowledges support from Departament d'Universitats i Recerca de la Generalitat de Catalunya. | |
| dc.description.abstract | We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGICYT | |
| dc.description.sponsorship | CICYT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26171 | |
| dc.identifier.doi | 10.1142/S0217979202015492 | |
| dc.identifier.issn | 0217-9792 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1142/S0217979202015492 | |
| dc.identifier.relatedurl | http://www.worldscientific.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59097 | |
| dc.issue.number | 28-29 | |
| dc.journal.title | International Journal of Modern Physics B | |
| dc.language.iso | eng | |
| dc.page.final | 4404 | |
| dc.page.initial | 4401 | |
| dc.publisher | World Scientific Publ. Co. Pte.Ltd. | |
| dc.relation.projectID | PB97-1254 | |
| dc.relation.projectID | TIC-98/0740 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Scattering | |
| dc.subject.keyword | In(1-x)GaxAsyP(1-y) | |
| dc.subject.keyword | InP. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments | |
| dc.type | journal article | |
| dc.volume.number | 16 | |
| dcterms.references | 1) S. Koumetx, J. Marcon, K. Ketata, C. Dubon-Chevalier, P.Launay, J.L. Benchimol, Appl. Phys. Lett., 67, 2161-2163 (1995). 2) R. Berserman, C. Hirlimann, M. Balkanski, J. Chevallier, Solid State Commun., 20, 485-487 (1976). 3) L. Artús, R. Cuscó, J. Ibáñez, N. Blanco, G. González-Díaz, Phys. Rev. B., 60, 5456-5463 (1999). 4) B. Jusserand, S. Slempkes, Solid State Commun., 49, 95-98 (1984). 5) J.P. Estrera, P.D. Stevens, R. Glosser, W.M. Duncan, Y.C. Kao, H.Y. Liu, E.A. Beam III, Appl. Phys. Lett., 61, 1927-1929 (1992). 6) R. Cuscó, G. Talamás, L. Artús, J.M. Martín, G. González-Díaz, J. Appl. Phys., 79, 3927-3929 (1996). 7) A. Pinczuk, J.M. Worlock, R.E. Nahory, M.A. Pollack, Appl. Phys. Lett., 33, 461-463 (1978). | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 6db57595-2258-46f1-9cff-ed8287511c84 | |
| relation.isAuthorOfPublication | a5ab602d-705f-4080-b4eb-53772168a203 | |
| relation.isAuthorOfPublication.latestForDiscovery | a5ab602d-705f-4080-b4eb-53772168a203 |
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