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Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments

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http://dx.doi.org/10.1142/S0217979202015492

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2002

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World Scientific Publ. Co. Pte.Ltd.
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https://hdl.handle.net/20.500.14352/59097

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Abstract

We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy.

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IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002) (8. 2002. Xian-Peoples, China). © World Scientific Publishing Company. This work was partially by DGICYT grant PB97-1254 and by CICYT grant TIC-98/0740. One of us (S.H.) acknowledges support from Departament d'Universitats i Recerca de la Generalitat de Catalunya.

UCM subjects

Electricidad, Electrónica (Física)

Unesco subjects

2202.03 Electricidad

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