On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD
dc.contributor.author | Martil De La Plaza, Ignacio | |
dc.contributor.author | González Díaz, Germán | |
dc.contributor.author | San Andrés Serrano, Enrique | |
dc.date.accessioned | 2023-06-20T10:44:21Z | |
dc.date.available | 2023-06-20T10:44:21Z | |
dc.date.issued | 2005-05 | |
dc.description | Workshop on Dielectrics in Micoelectronics (WoDiM 2004) (13. 2004. Cork, Irlanda). © 2004 Elsevier Ltd. All rights reserved. | |
dc.description.abstract | We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance-voltage (C-P) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G-t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model. | |
dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
dc.description.faculty | Fac. de Ciencias Físicas | |
dc.description.refereed | TRUE | |
dc.description.status | pub | |
dc.eprint.id | https://eprints.ucm.es/id/eprint/26019 | |
dc.identifier.citation | [1] Green, M.L., Gusev, E.P., Degraeve, R., Garfunkel, E.L., J. Appl. Phys., 2001,90, 2057. [2] Basa, D.K., Bose, M., Bose, D.N., J. Appl. Phys., 2000, 87, 4324. [3] Del Prado, Á., Martínez, F., Mártil, I., González-Díaz, G., Fernández, M., J. Vac. Sci. Technol. A, 1999, 17, 1263. [4] Kern, W., RCA Rev., 1970, 31, 187. [5] He, L., Hasegawa, H., Sawada, T., Ohno, H., J. Appl. Phys., 1988, 63, 2120. [6] Dueñas, S., Peláez, R., Castán, H., Pinacho, R., Quintanilla, L., Barbolla, J., et al., Appl. Phys. Lett., 1997, 71, 826. [7] Castán, H., Dueñas, S., Barbolla, J., Redondo, E., Blanco, N., Mártil, I., et al., Microelectron. Reliab., 2000, 40, 845. | |
dc.identifier.doi | 10.1016/j.microrel.2004.11.012 | |
dc.identifier.issn | 0026-2714 | |
dc.identifier.officialurl | http://dx.doi.org/10.1016/j.microrel.2004.11.012 | |
dc.identifier.relatedurl | http://www.sciencedirect.com | |
dc.identifier.uri | https://hdl.handle.net/20.500.14352/51116 | |
dc.issue.number | 5-6 | |
dc.journal.title | Microelectronics reliability | |
dc.language.iso | eng | |
dc.page.final | 981 | |
dc.page.initial | 978 | |
dc.publisher | Pergamon-Elsevier Science Ltd. | |
dc.rights.accessRights | open access | |
dc.subject.cdu | 537 | |
dc.subject.keyword | Films. | |
dc.subject.ucm | Electricidad | |
dc.subject.ucm | Electrónica (Física) | |
dc.subject.unesco | 2202.03 Electricidad | |
dc.title | On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD | |
dc.type | journal article | |
dc.volume.number | 45 | |
dspace.entity.type | Publication | |
relation.isAuthorOfPublication | 6db57595-2258-46f1-9cff-ed8287511c84 | |
relation.isAuthorOfPublication | a5ab602d-705f-4080-b4eb-53772168a203 | |
relation.isAuthorOfPublication | 21e27519-52b3-488f-9a2a-b4851af89a71 | |
relation.isAuthorOfPublication.latestForDiscovery | a5ab602d-705f-4080-b4eb-53772168a203 |
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