On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorSan Andrés Serrano, Enrique
dc.date.accessioned2023-06-20T10:44:21Z
dc.date.available2023-06-20T10:44:21Z
dc.date.issued2005-05
dc.descriptionWorkshop on Dielectrics in Micoelectronics (WoDiM 2004) (13. 2004. Cork, Irlanda). © 2004 Elsevier Ltd. All rights reserved.
dc.description.abstractWe investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance-voltage (C-P) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G-t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26019
dc.identifier.citation[1] Green, M.L., Gusev, E.P., Degraeve, R., Garfunkel, E.L., J. Appl. Phys., 2001,90, 2057. [2] Basa, D.K., Bose, M., Bose, D.N., J. Appl. Phys., 2000, 87, 4324. [3] Del Prado, Á., Martínez, F., Mártil, I., González-Díaz, G., Fernández, M., J. Vac. Sci. Technol. A, 1999, 17, 1263. [4] Kern, W., RCA Rev., 1970, 31, 187. [5] He, L., Hasegawa, H., Sawada, T., Ohno, H., J. Appl. Phys., 1988, 63, 2120. [6] Dueñas, S., Peláez, R., Castán, H., Pinacho, R., Quintanilla, L., Barbolla, J., et al., Appl. Phys. Lett., 1997, 71, 826. [7] Castán, H., Dueñas, S., Barbolla, J., Redondo, E., Blanco, N., Mártil, I., et al., Microelectron. Reliab., 2000, 40, 845.
dc.identifier.doi10.1016/j.microrel.2004.11.012
dc.identifier.issn0026-2714
dc.identifier.officialurlhttp://dx.doi.org/10.1016/j.microrel.2004.11.012
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51116
dc.issue.number5-6
dc.journal.titleMicroelectronics reliability
dc.language.isoeng
dc.page.final981
dc.page.initial978
dc.publisherPergamon-Elsevier Science Ltd.
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordFilms.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleOn the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD
dc.typejournal article
dc.volume.number45
dspace.entity.typePublication
relation.isAuthorOfPublication6db57595-2258-46f1-9cff-ed8287511c84
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication21e27519-52b3-488f-9a2a-b4851af89a71
relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203
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