On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD
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2005
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Pergamon-Elsevier Science Ltd.
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Abstract
We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance plasma assisted chemical vapour deposition (ECR-CVD). We use capacitance-voltage (C-P) technique to study charge trapped in the insulator, Deep Level Transient Spectroscopy (DLTS) to study the trap distributions at the interface, and conductance transient (G-t) technique to determine the energy and geometrical profiles of electrically active defects at the insulator bulk as these defects follow the disorder-induced gap state (DIGS) model.
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Workshop on Dielectrics in Micoelectronics (WoDiM 2004) (13. 2004. Cork, Irlanda). © 2004 Elsevier Ltd. All rights reserved.