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Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage

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dc.book.title15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2015
dc.conference.date14/09/2015-18/09/2015
dc.conference.placeMoscow (Russia)
dc.conference.title2015 IEEE European Conferences on Radiation Effecs on Component and Systems (RADECS2015)
dc.contributor.authorClemente Barreira, Juan Antonio
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorVila, Francesca
dc.contributor.authorBaylac, Maud
dc.contributor.authorRamos Vargas, Pablo Francisco
dc.contributor.authorVargas Vallejo, Vanessa Carolina
dc.contributor.authorMecha López, Hortensia
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorVelazco, Raoul
dc.date.accessioned2023-06-18T07:13:35Z
dc.date.available2023-06-18T07:13:35Z
dc.date.issued2015-09-18
dc.description©IEEE 2015 European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú). Date of Conference: 14-18 Sept. 2015
dc.description.abstractThis paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.departmentDepto. de Arquitectura de Computadores y Automática
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyFac. de Informática
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad
dc.description.sponsorshipSecretaría de Educación Superior Ciencia Tecnología e Innovación del Ecuador (SENESCYT)
dc.description.sponsorshipPrograma "José Castillejo" para movilidad de profesores
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/34157
dc.identifier.doi10.1109/RADECS.2015.7365640
dc.identifier.isbn978-1-5090-0232-0
dc.identifier.officialurlhttp://dx.doi.org/10.1109/RADECS.2015.7365640
dc.identifier.relatedurlhttp://www.radecs2015.org
dc.identifier.relatedurlhttp://ieeexplore.ieee.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/24709
dc.language.isoeng
dc.page.final165
dc.page.initial162
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.projectIDTIN2013-40968-P
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.cdu539.16
dc.subject.cdu621.3.049.77
dc.subject.keywordCOTS
dc.subject.keywordLPSRAM
dc.subject.keywordNeutron tests
dc.subject.keywordRadiation hardness
dc.subject.keywordReliability
dc.subject.keywordSoft error
dc.subject.keywordSRAM
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.subject.ucmCircuitos integrados
dc.subject.unesco2203.07 Circuitos Integrados
dc.titleNeutron-Induced single events in a COTS soft-error free SRAM at low bias voltage
dc.title.alternativeSucesos Aislados inducidos por neutrones en una memoria estática de acceso aleatorio comercial a tensiones ultrabajas
dc.typebook part
dcterms.references[1] M. P. King et al., “Electron-Induced Single-Event Upsets in Static Random Access Memory,” IEEE Transactions on Nuclear Science, vol. 60, pp. 4122–4129, Dec. 2013. [2] Renesas Electronics, “About LPSRAM Effort.” [Online]. Available: http://www.renesas.eu/products/memory/low_power_sram/child/renesas_effort.jsp [3] M. O’Bryan et al., “Compendium of Recent Single Event Effects Results for Candidate Spacecraft Electronics for NASA,” in IEEE Radiation Effects Data Workshop (REDW), pp. 11–20, July 2008. [4] S. Uznanski et al., “The Effect of Proton Energy on SEU Cross Section of a 16 Mbit TFT PMOS SRAM with DRAM Capacitors,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3074–3079, Dec. 2014. [5] R. Velazco et al., “Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron Radiation,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3103–3108, Dec. 2014. [6] G. Tsiligiannis et al., “Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode,” IEEE Transactions on Nuclear Science, vol. 60, pp. 2617–2622, Aug. 2013. [7] G. Tsiligiannis et al., “Multiple Cell Upset Classification in Commercial SRAMs,” IEEE Transactions on Nuclear Science, vol. 61, pp. 1747–1754, Aug. 2014. [8] G. Tsiligiannis et al., “Dynamic Test Methods for COTS SRAMs,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3095–3102, Dec. 2014. [9] F. Villa et al., “Accelerator-Based Neutron Irradiation of Integrated Circuits at GENEPI2 (France),” in IEEE Radiation Effects Data Workshop (REDW), pp. 1–5, July 2014. [10] A. Vazquez-Luque et al., “Neutron Induced Single Event Upset Dependence on Bias Voltage for CMOS SRAM With BPSG,” IEEE Transactions on Nuclear Science, vol. 60, pp. 4692–4696, Dec. 2013. [11] L. D. Edmonds et al., “Ion-induced stuck bits in 1T/1C SDRAM cells,” IEEE Transactions on Nuclear Science, vol. 48, pp. 1925–1930, Dec. 2001. [12] A. Haran et al., “Single Event Hard Errors in SRAM Under Heavy Ion Irradiation,” IEEE Transactions on Nuclear Science, vol. 61, pp. 2702–2710, Oct. 2014.
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relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
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relation.isAuthorOfPublication.latestForDiscovery919b239d-a500-4adb-aacf-00206a2c1512

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