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Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage

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http://dx.doi.org/10.1109/RADECS.2015.7365640

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2015

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IEEE-Inst Electrical Electronics Engineers Inc
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https://hdl.handle.net/20.500.14352/24709

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Abstract

This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.

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©IEEE 2015 European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú). Date of Conference: 14-18 Sept. 2015

UCM subjects

Electrónica (Física), Radiactividad, Circuitos integrados

Unesco subjects

2203.07 Circuitos Integrados

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