Local distribution of deep centers in GaP studied by infrared cathodoluminescence
| dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Fernández Sánchez, Paloma | |
| dc.date.accessioned | 2023-06-20T19:07:58Z | |
| dc.date.available | 2023-06-20T19:07:58Z | |
| dc.date.issued | 1991-01-21 | |
| dc.description | © 1991 American Institute of Physics. This work was supported by the Comisibn Interministerial de Ciencia y Tecnologia (Project PB86-0151) . The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples and Dr. P. Moser (C.E.N.G.Grenoble) for the electron irradiation. | |
| dc.description.abstract | Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Comisión Interministerial de Ciencia y Tecnologia | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/27035 | |
| dc.identifier.doi | 10.1063/1.104681 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.104681 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59289 | |
| dc.issue.number | 3 | |
| dc.journal.title | Applied physics Letters | |
| dc.language.iso | eng | |
| dc.page.final | 259 | |
| dc.page.initial | 257 | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | Project PB86-0151 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Vacancy Defects | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Local distribution of deep centers in GaP studied by infrared cathodoluminescence | |
| dc.type | journal article | |
| dc.volume.number | 58 | |
| dcterms.references | 1. N. Killoran, B. C. Cavenett, M. Godlewski, T. A. Kennedy, and N. D. Wilsey, J. Phys. C 15, L723 (1982). 2. X. Z. Yang, L. Samuelson, H. G. Grimmeiss, and P. Omling, Sem dond. Sci. Technol. 3, 488 (1988). 3. M. Godlewski and B. Monemar, J. Appl. Phys. 64, 200 (1988). 4. K. Chino, T. Kazuno, K. Satoh, and M. Kubota, in Semi-Znsuluting III-V Materials (Adam Hilger, England, 1988), p. 133. 5. F. Domínguez-Adame, J. Piqueras, N. de Diego, and J. Llopis, J. Appl. Phys. 63, 2583 (1988). 6. F. Domínguez-Adame, J. Piqueras, N. de Diego, and P. Moser, Solid State Commun. 67, 665 (1988). 7. F. Domínguez-Adame and J. Piqueras, Mater. Chem. Phys. 21, 539 (1989). 8. E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, and T. Wosinski, J. Appl. Phys. 53, 6140 (1982). 9. A. R. Peaker, B. Halmilton, D. R. Wight, D. Blenkinsop, W. Harding, and R. Gibb, Inst. Phys. Conf. Ser. No. 33a, 326 (1977). | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | dbc02e39-958d-4885-acfb-131220e221ba | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication | daf4b879-c4a8-4121-aaff-e6ba47195545 | |
| relation.isAuthorOfPublication.latestForDiscovery | dbc02e39-958d-4885-acfb-131220e221ba |
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