Local distribution of deep centers in GaP studied by infrared cathodoluminescence
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1991
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Amer Inst Physics
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Abstract
Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
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© 1991 American Institute of Physics.
This work was supported by the Comisibn Interministerial de Ciencia y Tecnologia (Project PB86-0151) . The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples and Dr. P. Moser (C.E.N.G.Grenoble) for the electron irradiation.