Electronic-structure of Si delta-doped GaAs in an electric-field
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1994
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[1]._ Wood C E C. Metze G. Berm J and Eastman L 1980 J. Appl. Phys. 51 383
[2]._ Chene Wenchao. Zrenner A. Oiu-Yi Ye. Koch F. Gztzmacher b and Balk Pi989 Senkona. Sci. Technol. 4 16
[3].-Koenraad P M, Blom F A P, bngerak C J G M, Leys M R, Perenboom J A A J, Singleton J, Spermon S J R M, van der Vleuten W C, Voncken A P J and Wolter J H 1990 Semicond. Sci. Technol. 5 861
[4].-Egues J C, Barbosa J C, Notari A C, Basmaji P, Ioriatti L, Ranz E and Portal J C 1991 J. AppL Phys. 70 3678
[5].-Shibli S M, Scolfaro,L M R. Leite J R, MendonGa C A C, Plentz F and Meneses E 1992 Appf. Phys. Left 60 2895 [6].-Ioriani L 1990 Phys. Rev. B 41 8340
[6].-Ioriani L 1990 Phys. Rev. B 41 8340
[7].-Degani M H 1991 J. Appl. Phy. 70 4362
[8].-Gold A. Ghazali A and Sene J 1992 Semicond. Scf Tec&ol. 7 972
[9].-Henriques A B and Gonplves L C D 1993 Semicond Sci. Technol. 8 585
[10].-Whall T E 1992 Contemo. Phvs. 33 369
[11].-Maciel A C, Tatham M,'RyaLJ F, Worlock J M, Nahon R E. Harbinson J P and Florez L T 1990 Sud Sci 228 251
[12].-Chane M C and Niu 0 1993 Phvs. Rev. B 48 2215
[13].-B1eus-i J, Bastard G aid VoisonP 1988 Phys. Rev. Lett. 60 220
[14].-Agull6-Rueda F. MCndez E E and Hong J M 1989 Phys. Rev. B 40 1357
[15].-Digman M M and Sipe J E 1990 Phys. Rev. Letr. 64 1797
[16].-Saker M K 1991 Phys. Rev. B 43 4945
[17].-Cota E, JosC J V and Monsivais 0 1987 Phys. Rev. B 35 8929
[18].-Banavar J R and Coon D D 1978 Phys. Rev. B 17 3744
[19].-Degani M H 1991 Appl. Phys. Left. 59 57
[20].-Ritze M, Horing N J M and Enderlein R 1993 Phys. Rev. B 47 1037
[21].-Hagon J P, Jaros M and Herbert D C 1989 Phys. Rev. B 40 6420
[22].-Trzeciakowski W and Gurioli M 1991 Phys. Rev. B 44 3880
[23].-Callaway J 1991 Quantum Theory ofrhe Solid Sfufe (San Diego: Academic) p 400 [24].-M€ndez B, Dominguez-Adame F and Macia E 1993 J. Phys. A: Math. Gen. 26 171
[24].-M€ndez B, Dominguez-Adame F and Macia E 1993 J. Phys. A: Math. Gen. 26 171
[25].-Leo J and MacKiMon A 1989 J. Phys.: Condens. Matter 1 1449
Abstract
The electron dynamics and the density of states of both single and periodic Si delta-doped GaAs subject to an applied electric field are studied theoretically. The space charge potential due to delta-doping is obtained by means of the semiclassical Thomas-Fermi model. Analysing the change in the density of states introduced by the delta-doping plus the electric field, we observe a set of sharp peaks, corresponding to field-induced localized states, and subsidiary peaks associated with more extended states. Furthermore, we use the inverse participation ratio to evaluate the spatial extent of electron wavefunctions. The number of sharp peaks equals the number of delta-doped layers. In the case of periodically delta-doped samples, the sharp peaks are equally spaced and give rise to Stark ladder resonances.
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© 1994 IOP Publishing Ltd.
The authors are indebted to A Sinchez for a critical reading of the manuscript.