Electronic-structure of Si delta-doped GaAs in an electric-field

dc.contributor.authorDomínguez-Adame Acosta, Francisco
dc.contributor.authorMéndez Martín, Bianchi
dc.contributor.authorMaciá Barber, Enrique Alfonso
dc.date.accessioned2023-06-20T18:56:56Z
dc.date.available2023-06-20T18:56:56Z
dc.date.issued1994-03
dc.description© 1994 IOP Publishing Ltd. The authors are indebted to A Sinchez for a critical reading of the manuscript.
dc.description.abstractThe electron dynamics and the density of states of both single and periodic Si delta-doped GaAs subject to an applied electric field are studied theoretically. The space charge potential due to delta-doping is obtained by means of the semiclassical Thomas-Fermi model. Analysing the change in the density of states introduced by the delta-doping plus the electric field, we observe a set of sharp peaks, corresponding to field-induced localized states, and subsidiary peaks associated with more extended states. Furthermore, we use the inverse participation ratio to evaluate the spatial extent of electron wavefunctions. The number of sharp peaks equals the number of delta-doped layers. In the case of periodically delta-doped samples, the sharp peaks are equally spaced and give rise to Stark ladder resonances.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24958
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dc.identifier.doi10.1088/0268-1242/9/3/005
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://iopscience.iop.org/0268-1242/9/3/005
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58979
dc.issue.number3
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final271
dc.page.initial263
dc.publisherIOP Publishing LTD
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordSemiconductor Superlattices
dc.subject.keywordStark Ladders
dc.subject.keywordQuantum-Wells
dc.subject.keywordMBE
dc.subject.ucmFísica de materiales
dc.titleElectronic-structure of Si delta-doped GaAs in an electric-field
dc.typejournal article
dc.volume.number9
dspace.entity.typePublication
relation.isAuthorOfPublicationdbc02e39-958d-4885-acfb-131220e221ba
relation.isAuthorOfPublicationdd37b3ce-0186-44e8-a4b6-62cef9121754
relation.isAuthorOfPublication.latestForDiscoverydbc02e39-958d-4885-acfb-131220e221ba
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