Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Olea Ariza, Javier | |
| dc.date.accessioned | 2023-06-20T03:41:17Z | |
| dc.date.available | 2023-06-20T03:41:17Z | |
| dc.date.issued | 2009-01-26 | |
| dc.description | © 2009 American Institute of Physics. This work has been supported by the project FULL SPECTRUM (Grant No. SES6-CT-2003-502620) funded by the European Commission, by the Regional Government of Madrid within the project NUMANCIA (Grant No. S-0505/ENE/000310), and by the Spanish National Research Program within the project GENESIS-FV (Grant No. CSD2006-0004). | |
| dc.description.abstract | The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | FULL SPECTRUM funded by the European Commission | |
| dc.description.sponsorship | Regional Government of Madrid | |
| dc.description.sponsorship | Spanish National Research Program | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25910 | |
| dc.identifier.doi | 10.1063/1.3077202 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.3077202 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/44248 | |
| dc.issue.number | 4 | |
| dc.journal.title | Applied physics Letters | |
| dc.language.iso | eng | |
| dc.publisher | Amer Inst Physics | |
| dc.relation.projectID | SES6-CT-2003-502620 | |
| dc.relation.projectID | Pproject NUMANCIA-(S-0505/ENE/000310) | |
| dc.relation.projectID | Project GENESIS-FV-CSD2006-0004 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Solar-Cells | |
| dc.subject.keyword | Recombination | |
| dc.subject.keyword | Diffusion. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material | |
| dc.type | journal article | |
| dc.volume.number | 94 | |
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| dspace.entity.type | Publication | |
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