Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
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2009
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Amer Inst Physics
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Abstract
The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.
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© 2009 American Institute of Physics. This work has been supported by the project FULL SPECTRUM (Grant No. SES6-CT-2003-502620) funded by the European Commission, by the Regional Government of Madrid within the project NUMANCIA (Grant No. S-0505/ENE/000310), and by the Spanish National Research Program within the project GENESIS-FV (Grant No. CSD2006-0004).