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Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP

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dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorMartín, J.M.
dc.contributor.authorArtús, L.
dc.contributor.authorCuscó, R.
dc.contributor.authorIbañez, J.
dc.date.accessioned2023-06-20T19:10:18Z
dc.date.available2023-06-20T19:10:18Z
dc.date.issued1997-10-15
dc.description© American Institute of Physics. The authors gratefully acknowledge the Spanish Ministerio de Educación y Ciencia for financial support.
dc.description.abstractWe have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 degrees C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish Ministerio de Educación y Ciencia
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27482
dc.identifier.doi10.1063/1.365753
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.365753
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59345
dc.issue.number8
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final3739
dc.page.initial3736
dc.publisherAmerican Institute of Physics
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordIon-Implantation
dc.subject.keywordGaAs
dc.subject.keywordDamage
dc.subject.keywordSilicon.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleRaman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP
dc.typejournal article
dc.volume.number82
dcterms.references1) N. Moriya, I. Brener, R. Kalish, W. Pfeiffer, M. Deicher, R. Keller, R. Magerle, E. Recknagel, H. Skudlik, Th. Wichert, and H. Wolf, J. Appl. Phys., 73, 4248, 1993. 2) S. Ushioda, Solid State Commun., 15, 149, 1974. 3) C. S. R. Rao, S. Sundaram, R. L. Schmidt, and J. Comas, J. Appl. Phys., 54, 1808, 1983. 4) K. K. Tiong, P. M. Amirtharaj, F. H. Pollak, and D. E. Aspnes, Appl. Phys. Lett., 44, 122, 1984. 5) G. Burns, F. H. Dacol, C. R. Wie, E. Burnstein, and M. Cardona, Solid State Commun., 62, 449, 1987. 6) M. Holtz, R. Zallen, and O. Brafman, Phys. Rev. B, 38, 6097, 1988. 7) J. Wagner, Appl. Phys. Lett., 52, 1158, 1988. 8) J. Wagner and C. R. Fritsche, J. Appl. Phys., 64, 808, 1988. 9) U. V. Desnica, J. Wagner, T. E. Haynes, and O. W. Holland, J. Appl. Phys., 71, 2591, 1992. 10) R. Ashokan, K. P. Jain, H. S. Mavi, and M. Balkanski, J. Appl. Phys., 60, 1985, 1986. 11) M. Holtz, R. Zallen, A. E. Geissberger, and R. A. Sadler, J. Appl. Phys., 59, 1946, 1986. 12) J. Wagner and Ch. Hoffmann, Appl. Phys. Lett., 50, 682, 1987. 13) H. Yoshida and T. Katoda, J. Appl. Phys., 67, 7281, 1990. 14) M. Gargouri, B. Prevot, and C. Schwab, J. Appl. Phys., 62, 3902, 1987. 15) L. L. Abels, S. Sundaram, R. L. Schmidt, and J. Comas, Appl. Surf. Sci., 9, 2, 1981. 16) S. J. Yu, H. Asahi, S. Emura, H. Sumida, S. Gonda, and H. Tanoue, J. Appl. Phys., 66, 856, 1989. 17) E. Bedel, G. Landa, R. Carles, J. B. Renucci, J. M. Roquais, and P. N. Favennec, J. Appl. Phys., 60, 1980, 1986. 18) R. K. Nadella, M. V. Rao, D. S. Simons, P. H. Chi, M. Fatemi, and H. B. Dietrich, J. Appl. Phys., 70, 1750, 1991. 19) R. Cuscó, G. Talamàs, L. Artús, G. González-Díaz, and J. Martín, J. Appl. Phys., 79, 3927, 1996. 20) H. Shen, G. Yang, Z. Zhou, W. Huang, and S. Zou, J. Appl. Phys., 68, 4894, 1990. 21) J. M. Martín, S. García, I. Mártil, G. González-Díaz, R. Cuscó, and L. Artús, Mater. Sci. Technol., 11, 1203, 1995. 22) D. E. Aspnes and A. A. Studna, Phys. Rev. B, 27, 985, 1983. 23) D. Olego and M. Cardona, Phys. Rev. B, 24, 7217, 1981. 24) L. Artús, R. Cuscó, J. M. Martín, and G. González-Díaz, Phys. Rev. B, 50, 11, 552, 1994. 25) L. A. Christel and J. F. Gibbons, J. Appl. Phys., 52, 5050, 1981. 26) A. Dodabalapur and B. G. Streetman, J. Electron. Mater., 18, 65, 1989.
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