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Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.date.accessioned2023-06-20T19:05:01Z
dc.date.available2023-06-20T19:05:01Z
dc.date.issued2000-08
dc.description© IOP Publishing Ltd. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish Government under Grant No TIC 98/0740.
dc.description.abstractThe influence of the semiconductor doping type over the electrical properties of Al/SiNx :H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C-V data show that the SiNx:H/p-In0.53Ga0.47As interface is more defective than the SiNx,:H/n-In0.53Ga0.47As one. In both n- and p-type MIS structures, the interface trap density (D-it), the electrical breakdown field (E-B) and the resistivity (rho) are highly dependent on the insulator composition. On the other hand, rapid thermal annealing treatments at temperatures up to 600 degrees C induce a gradual improvement of both interface and SINx:H bulk quality on n-type MIS devices, whereas a continuous degradation of the SiNx:H/p-In0.53Ga0.47As interface properties is observed. Zinc out-diffusion from p-In0.53Ga0.47As towards the insulator-semiconductor interface could explain the poorest electrical characteristics of the MIS structures based on a p-type semiconductor.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish Government
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26786
dc.identifier.doi10.1088/0268-1242/15/8/307
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://dx.doi.org/10.1088/0268-1242/15/8/307
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59223
dc.issue.number8
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final828
dc.page.initial823
dc.publisherIop Publishing Ltd
dc.relation.projectIDTIC 98/0740
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordChemical-Vapor-Deposition
dc.subject.keywordInsulator-Semiconductor Structures
dc.subject.keywordGate Quality
dc.subject.keywordFilms
dc.subject.keywordTransistors
dc.subject.keywordDielectrics
dc.subject.keywordDiffusion
dc.subject.keywordStability
dc.subject.keywordRemote
dc.subject.keywordPECVD.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleComparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique
dc.typejournal article
dc.volume.number15
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