Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures

Abstract

As it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the DIGS spatial and energetical distribution obtained by recording conductance transients at several temperatures (ranging from 77 to 300 K) and several frequencies (ranging from 100 Hz to 200 KHz). These measurements allow us to obtain three-dimensional defect maps of Al/SiNx:H/InP structures browsing ranges of 0.5 eV in energy and 40 Angstrom in depth. Our results show that this technique is a very useful tool for the electrical characterization of MIS structures and reveals itself as very valuable in the III-V semiconductor-field-effect transistor scenario.