Intermediate band mobility in heavily titanium-doped silicon layers
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Olea Ariza, Javier | |
| dc.date.accessioned | 2023-06-20T03:41:13Z | |
| dc.date.available | 2023-06-20T03:41:13Z | |
| dc.date.issued | 2009-09 | |
| dc.description | © 2009 Elsevier B.V. All rights reserved. This work has been supported by the project IBPOWER, funded by the European Commission under Contract no .211640, by the Regional Government of Madrid with in the project NUMANCIA (S-0505/ENE/000310) and by the Spanish National Research Program with in the project GENESIS-FV (CSD2006-0004). | |
| dc.description.abstract | The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of ail intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | European Commission | |
| dc.description.sponsorship | Regional Government of Madrid | |
| dc.description.sponsorship | Spanish National Research Program | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25892 | |
| dc.identifier.doi | 10.1016/j.solmat.2009.05.014 | |
| dc.identifier.issn | 0927-0248 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1016/j.solmat.2009.05.014 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/44246 | |
| dc.issue.number | 9 | |
| dc.journal.title | Solar Energy Materials and Solar Cells | |
| dc.language.iso | eng | |
| dc.page.final | 1673 | |
| dc.page.initial | 1668 | |
| dc.publisher | Elsevier Science BV | |
| dc.relation.projectID | Project IBPOWER-211640 | |
| dc.relation.projectID | Project NUMANCIA-(S-0505/ENE/000310) | |
| dc.relation.projectID | Project GENESIS-FV-CSD2006-0004 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Solar-Cells | |
| dc.subject.keyword | Energy-Conversion | |
| dc.subject.keyword | Efficiency | |
| dc.subject.keyword | Recombination | |
| dc.subject.keyword | Ionization | |
| dc.subject.keyword | Iron. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Intermediate band mobility in heavily titanium-doped silicon layers | |
| dc.type | journal article | |
| dc.volume.number | 93 | |
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