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Evolution of lowest supply voltage and hysteresis phenomena in irradiated analog CMOS switches

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dc.book.title2004 IEEE Radiation Effects Data Workshop : ( workshop record )
dc.conference.date17/07/2004-22/07/2004
dc.conference.placeAtlanta (USA)
dc.conference.titleRadiation Effects Data Workshop, 2004 IEEE
dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorZong, Yi
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorCasas-Cubillos, Juan
dc.contributor.authorRodríguez-Ruiz, Miguel Ángel
dc.date.accessioned2023-06-20T13:41:36Z
dc.date.available2023-06-20T13:41:36Z
dc.date.issued2004-07-22
dc.description© IEEE IEEE Radiation Effects Data Workshop (2004, Atlanta). This work was supported by the cooperation agreement K476/LHC between CERN and UCM, by the Spanish Research Agency CICYT (FPA2002-00912) and partially supported by ITN.
dc.description.abstractRadiation tests on CMOS analog switches were carried out in order to select the most tolerant device for future use in the cryogenic system of the CERN large hadron collider. After irradiation, the devices showed some interesting changes related to the power supplies: an increase in the lowest supply voltage capable of biasing correctly the devices; some devices cannot work with TTL logic levels. In addition, hysteresis phenomena appear.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.sponsorshipCERN
dc.description.sponsorshipITN (Portugal)
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/29103
dc.identifier.doi10.1109/REDW.2004.1352912
dc.identifier.isbn0-7803-8697-3
dc.identifier.officialurlhttp://dx.doi.org/10.1109/REDW.2004.1352912
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53407
dc.language.isoeng
dc.page.final95
dc.page.initial91
dc.page.total5
dc.publication.placeNew York
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.projectIDFPA2002- 00912
dc.relation.projectIDK476/LHC
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordCMOS analogue integrated circuits
dc.subject.keywordField effect transistor switches
dc.subject.keywordGamma-ray effects
dc.subject.keywordHysteresis
dc.subject.keywordNeutron effects
dc.subject.keywordLHC
dc.subject.keywordTID tests
dc.subject.keywordTTL logic levels
dc.subject.keywordDevice biasing voltage
dc.subject.keywordHysteresis phenomena
dc.subject.keywordIrradiated analog CMOS switches
dc.subject.keywordLarge hadron collider
dc.subject.keywordLowest supply voltage phenomena
dc.subject.keywordNeutron fluence
dc.subject.keywordRadiation tests
dc.subject.keywordSwitching threshold voltage shift
dc.subject.keywordTotal gamma dose
dc.subject.keywordTotal ionizing dose
dc.subject.keywordCMOS logic circuits
dc.subject.keywordCryogenics
dc.subject.keywordLarge Hadron Collider
dc.subject.keywordLogic devices
dc.subject.keywordNeutrons
dc.subject.keywordPulse inverters
dc.subject.keywordSwitches
dc.subject.keywordSystem testing
dc.subject.keywordVoltage
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.titleEvolution of lowest supply voltage and hysteresis phenomena in irradiated analog CMOS switches
dc.typebook part
dcterms.references[1] P. Horowitz, The Art of Electronics, 2nd ed. Cambridge University Press, 1990. [2] A. C. Fernandes, I. C. Goncalves, J. G. Marques, J. Santos, A. J. G. Ramalho, and M. Osvay, “Mixed-field dosimetry of a fast neutron beam at the Portuguese Research Reactor for the irradiation of electronic circuits – measurements and calculations,” in Proc. 11th Intl. Symp. on Reactor Dosimetry, Aug. 2002, pp. 19–23. [3] “ATLAS Standard Radiation Test Methods, Appendix 2,” [online] Available: http://atlas.web.cern.ch/Atlas/GROUPS/FRONTEND/radhard.htm. [4] G. C. Messenger, “A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices,” IEEE Transactions on Nuclear Science, vol. 39, no. 3, pp. 468–473, Jun 1992. [5] J. R. Srour and J. M. McGarrity, “Radiation Effects on Microelectronics in Space,” Proceedings of the IEEE, vol. 76, no. 11, pp. 1443–1469, November 1988. [6] J. A. Agapito et al., “Radiation test on commercial instrumentation amplifiers, analog switches and DACs,” in Proc. 7th Workshop for LHC Experiments, 2001, pp. 113–118. [7] Y. Zong, F. J. Franco, and J. A. Agapito, “Using Optimization Techniques to Characterize Irradiated CMOS Switches,” to be presented at the RADECS2004 Workshop, Sept. 22-24 2004. [8] T. A. DeMassa and Z. Ciccone, Digital Integrated Circuits. John Wiley and Sons, 1996, ch. 26. [9] D. Larsen, P. Welling, and W. Tsacoyeanes, “The Effects of Ionizing Radiation on the Honeywell HTMOS High-Temperature Linear CMOS Technology,” in IEEE Radiation Effects Data Workshop, Jul. 1996, pp. 55–61.
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relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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