Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation
| dc.book.title | Positron Annihilation: ICPA-11 | |
| dc.contributor.author | Cavallini, A. | |
| dc.contributor.author | Dupasquier, A. | |
| dc.contributor.author | Ferro, G. | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Valli, M. | |
| dc.date.accessioned | 2023-06-20T21:09:44Z | |
| dc.date.available | 2023-06-20T21:09:44Z | |
| dc.date.issued | 1997 | |
| dc.description | © Trans Tech Publications Ltd. International Conference on Positron Annihilation (ICPA-11) (11. 1997. Kansas City, Missouri, USA). | |
| dc.description.abstract | The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most probably Te(As)V(Ga)(-), was observed. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26760 | |
| dc.identifier.doi | 255-257.614 | |
| dc.identifier.isbn | 0-87849-779-X | |
| dc.identifier.officialurl | http://dx.doi.org/10.4028/www.scientific.net/MSF.255-257.614 | |
| dc.identifier.relatedurl | http://www.scientific.net/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/60855 | |
| dc.issue.number | 255-2 | |
| dc.page.final | 616 | |
| dc.page.initial | 614 | |
| dc.page.total | 3 | |
| dc.publisher | Trans Tech Publications Ltd | |
| dc.relation.ispartofseries | Materials Science Forum | |
| dc.rights.accessRights | metadata only access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | As-Grown Gaas | |
| dc.subject.keyword | Doped Gaas | |
| dc.subject.keyword | Spectroscopy | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation | |
| dc.type | book part | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c |