Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation

Thumbnail Image

Official URL

http://dx.doi.org/10.4028/www.scientific.net/MSF.255-257.614

Full text at PDC

Publication date

1997

Authors

Advisors (or tutors)

Editors

Journal Title

Journal ISSN

Volume Title

Publisher

Trans Tech Publications Ltd
Citations
Google Scholar
Exportar
DC QDC MarcXML RDF MODS METS ORE-ATOM

URI

https://hdl.handle.net/20.500.14352/60855

Citation

Abstract

The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most probably Te(As)V(Ga)(-), was observed.

Research Projects

Organizational Units

Journal Issue

Description

© Trans Tech Publications Ltd. International Conference on Positron Annihilation (ICPA-11) (11. 1997. Kansas City, Missouri, USA).

UCM subjects

Física de materiales

Unesco subjects

Keywords

Collections

Secciones de libros